IXFT17N80Q Allicdata Electronics
Allicdata Part #:

IXFT17N80Q-ND

Manufacturer Part#:

IXFT17N80Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 17A TO-268(D3)
More Detail: N-Channel 800V 17A (Tc) 400W (Tc) Surface Mount TO...
DataSheet: IXFT17N80Q datasheetIXFT17N80Q Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The IXFT17N80Q is a part of the highly popular IXFT series of products from IXYS Corporation. This series of MOSFETs are designed specifically for high-number operation in motor drive applications, offering excellent power dissipation, over current protection, and low gate to source capacitance. It is a digital transistor optimized for superior switching performance and makes an ideal choice for motor drive applications. Furthermore, it offers high efficiency for power saving and temperature optimization.

The IXFT17N80Q is a three-terminal, advanced trench MOSFET that possesses a unique N channel channel architecture. This makes it ideal for operation in a variety of mode applications such as DC/DC converters, power modules, and power inverters. It is also highly suitable for switching applications. It features an internal ESD protection structure, which offers excellent protection from electrostatic discharge and accidental short-circuiting. With its advanced trench gate structure, the device features very low gate drive requirements, which allows for easy control of the underlying power FETs.

When it comes to its working principle, the IXFT17N80Q is based on the principle of N channel enhancement MOSFET. The device utilizes a small voltage on its gate, thus generating an invertible body effect (also known as the body field effect). This causes the channel between the source and drain to open up, while a negative gate voltage causes the channel to close. The transistor operates with a drain-source leakage current of 1μA – 100μA and a gate current of 0.5μA – 1μA. The on-resistance of the device is rated at 1mOhm – 6mOhm, making it well-suited for driving high-power loads.

In terms of application areas, the IXFT17N80Q is found in motor drive applications. It is widely used to control heavy-duty brushless DC (BLDC) motors, stepper motors, and various other high-power motor applications. Additionally, the transistor is used for DC/DC converters and power supply systems, motor control, electronic ballasts, and many other related applications. The device is designed to meet the requirements of the consumer’s robust design. It prides itself in its capability to be used in several operating temperature conditions, going all the way to 70°C ambient.

In conclusion, the IXFT17N80Q is an exceptional device, and its applications are endless. It offers excellent protection from electrostatic discharge and accidental short-circuiting and has a low gate drive requirement. It is suitable for driving high-power loads and is an ideal choice for motor drive applications. The device’s robust design makes it an excellent choice for use in several operating temperature conditions, going all the way to 70°C ambient. Therefore, IXFT17N80Q presents itself as a powerful choice for motor drive applications.

The specific data is subject to PDF, and the above content is for reference

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