IXFT180N20X3HV

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IXFT180N20X3HV is one of the most popular field effect transistors (FET) currently available in the market. It is a insulated gate bipolar transistor (IGBT) module which is widely used in power control applications such as motor control, power supply control and power factor correction. It has an extremely low on-resistance, low gate charge and high speed switching capability.

The IXFT180N20X3HV is a N-channel FET which has a maximum drain to source voltage of 180 volts and a maximum drain current of 20 amps. It has a package outline of HD-3 (3.94”x4.15”x0.97”). The maximum operating temperature of the device is 130 degree Celsius. This device is very easy to use since it does not require additional drive circuits for operation.

Working Principle

The IXFT180N20X3HV is based on the MOSFET technology which utilizes an insulated gate to control the flow of current. The gate voltage controls the width of a channel that is created between the source and the drain of the MOSFET. When the device is in the cut-off state, the channel width is zero and no current flows between the source and drain. In order to turn on the device a positive voltage needs to be applied to the gate and this will cause an inversion layer to form in the substrate, allowing current to flow between the source and the drain.

In addition to this, the IXFT180N20X3HV also has a body diode which is always in the forward direction and switches on when the voltage across the device is reversed. This body diode helps to protect the device from over-voltage spikes as well as offering a path for current when the device is turned off.

The IXFT180N20X3HV is also designed to dissipate heat efficiently. It has a power dissipation capacity of 120 watts and has thermal protection built into it which helps it to protect itself against excessive temperatures.

Application Field

The IXFT180N20X3HV is used primarily in Power Factor Correction (PFC) circuits and Motor Control systems. In such applications it is used as a switch to control the flow of current in the circuit. Due to its low on-resistance and high speed switching capability it is also well suited for use in switched mode power supplies (SMPS) and other high-voltage applications.

The IXFT180N20X3HV is also often used in lighting systems due to its ability to switch at high frequency. This allows it to be used to control lights that switch periodically, such as emergency vehicle lights, traffic signals and stunt lights.

In addition, the IXFT180N20X3HV is also used in microwave ovens as a capacitor switch and in switching power amplifiers because of its ability to switch high voltage and large currents.

Conclusion

The IXFT180N20X3HV is one of the most popular N-channel MOSFETs available in the market due to its low on-resistance, low gate charge and high speed switching capability. It is designed for use in power control applications such as motor control, power factor correction and switched mode power supplies. It is also often used in lighting systems and high voltage applications.

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