Allicdata Part #: | IXFT16N90Q-ND |
Manufacturer Part#: |
IXFT16N90Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 900V 16A TO-268 |
More Detail: | N-Channel 900V 16A (Tc) 360W (Tc) Surface Mount TO... |
DataSheet: | IXFT16N90Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Transistors are one of the most important components of modern electronic circuits. FETs, or Field Effect Transistors, are one of the main types of transistors used in modern electronics and are used for a wide variety of applications. The IXFT16N90Q is a type of FET, specifically a MOSFET, or a Metal Oxide Semiconductor Field Effect Transistor. This type of transistor provides several advantages over conventional FETs, making it an ideal choice for many modern applications.
The IXFT16N90Q is a single MOSFET transisto and can be used for a variety of applications. This transistor is often used in audio amplifier circuits and digital logic circuits, as well as for switching and power regulation. In addition, it can be used for high speed switching circuits, low power or battery powered applications, and for interfacing between digital and analog components.
When compared to other FETs, the IXFT16N90Q has several advantages, such as its low input capacitance, low leakage current, and high-frequency operation. Its low input capacitance makes it well-suited for high frequency operation, meaning that it can be used in a wide range of applications, from low power and battery powered to high speed switches. Its high frequency operation also makes it suitable for use in audio amplifier circuits, where high frequency signals need to be amplified. Furthermore, its low leakage current makes it suitable for low power applications, which require low current draw and low power consumption.
The IXFT16N90Q\'s working principle is based on the field effect transistor. This type of transistor is constructed with a single gate that is electrically insulated from the metal channel and substrate. When a voltage is applied to the gate, it creates an electric field, which induces a current to flow through the metal channel. This current then regulates the output voltage or current based on the voltage applied to the gate. The use of an isolated gate makes the IXFT16N90Q relatively immune to noise and interference, making it an ideal choice for high speed, audio, and digital applications.
In conclusion, the IXFT16N90Q is an excellent choice for a variety of applications, such as audio amplifiers, digital logic circuits, switching, power regulation, and low power/battery powered circuits. Its low input capacitance, low leakage current, and high-frequency operation make it well-suited for use in a broad range of applications. Furthermore, its field effect transistor design makes it relatively immune to noise and interference. This makes the IXFT16N90Q an ideal choice for a variety of applications requiring high speed, audio, and digital components.
The specific data is subject to PDF, and the above content is for reference
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