IXFT21N50Q

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IXFT21N50Q is a type of Self-Insulated Field-Effect Transistor (FET) featuring high switching speed, low on-resistance and good Avalanche capability, among other characteristics. It is typically used in electronic circuits that require high-power switching, such as those found in motor control and lighting control. With an integrated Sub-threshold current-spreading capability, it is capable of improving the efficiency of switching operations.

The IXFT21N50Q features a vertical double diffused metal oxide semiconductor (VDMOS) structure, which is suitable for use in very high-efficiency operations and in high-temperature applications. This is due to its inherent stability and improved power handling capabilities. It also features a self-isolated FET architecture, which minimizes interconnectivity for enhanced energy savings.

The IXFT21N50Q belongs to the group of Power MOSFETs, with its maximum drain current rating at 21A and its maximum drain source voltage at 500V. Additionally, it has a junction-to-ambient thermal resistance of 40°C/W and a typical gate charge of 3.3nC. The gate threshold voltage is -2V and the on-state resistance is 0.47mΩ. This makes it suitable for any number of power-related applications, such as motor speed controls, audio amplification, home appliances and portable electronic devices.

In terms of operation, the IXFT21N50Q uses the well-known MOSFET concept. This technology works by controlling the current flow between a source and a drain using an insulated gate. By providing a small voltage between the gate and the source, a voltage is used to regulate the power applied to the device. This is done by either turning the power off or by varying the current.

IXFT21N50Qs are generally used when more precise control is needed. With their high speed and low on-resistance, they are especially well-suited for power-related applications that require high-speed switching, such as motor speed controllers. Additionally, their Avalanche capability helps minimize losses in switching operations, improving energy efficiency.

The IXFT21N50Q is a popular choice for applications that require high levels of precision and speed. Thanks to its high switching speed and low on-resistance, it is ideal for motor control and lighting control, while its integrated Sub-threshold current-spreading technology can significantly improve the efficiency of these operations. Additionally, its self-isolated FET architecture helps improve energy savings while its Avalanche capable MOSFET technology further reduces the losses in switching operations. The IXFT21N50Q is a great choice for any power-related application that needs a precision and high speed solution.

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