IXFT40N85XHV Allicdata Electronics
Allicdata Part #:

IXFT40N85XHV-ND

Manufacturer Part#:

IXFT40N85XHV

Price: $ 9.82
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET NCH 850V 40A TO268HV
More Detail: N-Channel 850V 40A (Tc) 860W (Tc) Surface Mount TO...
DataSheet: IXFT40N85XHV datasheetIXFT40N85XHV Datasheet/PDF
Quantity: 22
1 +: $ 8.92710
30 +: $ 7.32207
120 +: $ 6.60782
510 +: $ 5.53627
Stock 22Can Ship Immediately
$ 9.82
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 860W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 850V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFT40N85XHV is a single, low voltage, low gate charge Power MOSFET transistor designed by IXYS Corporation. The transistor is best suited for applications in power supplies, DC/DC converters, and other high power applications. With a wide range of features and benefits, the IXFT40N85XHV is the ideal transistor for any design engineer.

Application Field

The IXFT40N85XHV transistor is a low voltage, low gate charge Power MOSFET that is ideal for high current applications. It has a wide operating temperature range of -55°C to 175°C, making it suitable for a range of automotive, industrial, and consumer applications. It also features a fast switching speed, low on-resistance, and low leakage current, making it suitable for inverter, motor control, and switching power applications.

The IXFT40N85XHV is a versatile transistor that is capable of handling high current applications, up to 40A and can handle Drain-Source voltages up to 800V. Due to the low gate charge and low input capacitance, the transistor has been proven to be a reliable choice for high power applications. The device is also RoHS compliant and is available in SOD-123FL package.

Working Principle

The IXFT40N85XHV is a single, low voltage, low gate charge Power MOSFET. It works on the basic principle of a Field Effect Transistor. FETs consist of three terminals: the Source, Drain, and Gate. The Gate is the control terminal of the FET, and the Drain and Source are the output terminals. When a voltage is applied to the Gate, it creates an electric field, which causes a channel to form between the Drain and Source, allowing current to flow through.

The IXFT40N85XHV features a fast switching speed, low on-resistance, and low leakage current, which is ideal for high-power applications. The fast switching speed allows the transistor to switch off quickly and reduce power loss, while the low leakage current ensures a more efficient operation. The low on-resistance of the IXFT40N85XHV also helps to reduce power loss and improve overall efficiency, making it an ideal choice for any power application.

The IXFT40N85XHV is a great choice for any design engineer seeking reliable operation and high performance in a power-efficient package. With its fast switching speed, low on-resistance, and low leakage current, the IXFT40N85XHV is the ideal transistor for any design engineer.

The specific data is subject to PDF, and the above content is for reference

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