IXFT74N20Q Allicdata Electronics
Allicdata Part #:

IXFT74N20Q-ND

Manufacturer Part#:

IXFT74N20Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH TO268
More Detail:
DataSheet: IXFT74N20Q datasheetIXFT74N20Q Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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The IXFT74N20Q is a powerful and highly efficient insulated-gate field-effect transistor (IGFET) used in a variety of applications. It is most commonly used in power electronics, audio equipment, and automotive applications. The IXFT74N20Q is a n-channel enhancement mode field-effect transistor (MOSFET). It is manufactured by using a Schottky Diode process. It is widely used as a switch, amplifier, buffer, and power controller in many industrial and commercial applications.

The IXFT74N20Q has a very low on-resistance of 12 mΩ when operating in the linear region. This makes it an excellent choice for low voltage applications, such as audio amplifiers, motor control applications, and even power supplies. It has a wide range of operating voltages and can handle very large continuous and pulsed currents. The IXFT74N20Q operates with a maximum drain to source voltage of minus 200 volts, or Vds ≤ -200 V. This allows it to easily handle high power applications in a wide range of voltage applications.

The IXFT74N20Q is a depletion-type device, which means that its off-state resistance is very low, but that it has a higher gate source voltage (Vgs) requirement than its enhancement-mode counterpart. In other words, when the gate source voltage (Vgs) is reduced, the IXFT74N20Q transistor\'s ON resistance increases. This effect is known as Vgs depletion.

The IXFT74N20Q has a maximum breakdown voltage of 800V, which makes it suitable for many high power applications. The IXFT74N20Q features an extremely low gate-charge that helps reduce conduction loss in the transistor. This is especially beneficial for applications where low noise and low electromagnetic interference (EMI) is desired. The IXFT74N20Q is also capable of providing fast switching speeds, allowing it to switch pulses at high speeds, with minimal drop in power.

The IXFT74N20Q is a very versatile and reliable component—but how does it work? Its basic working principle is relatively straightforward. When a positive voltage is applied to its gate terminal, the transistor turns on and current flows from its source to its drain terminals. Conversely, when a negative voltage is applied to its gate terminal, the transistor turns off and no current flows. This on-off process helps to control power in many different applications.

The IXFT74N20Q is an attractive choice for many power and audio applications due to its low on-resistance and high-frequency performance. It is also well suited for use in automotive applications due to its wide operational temperature range and low leakage current. This makes it an ideal choice for accurate control of logic circuits, motor drivers, and other high-power applications.

Overall, the IXFT74N20Q is a powerful, efficient and reliable component that is suitable for a wide range of applications ranging from audio equipment to automotive applications. Its extremely low gate-charge and relatively low breakdown voltage makes it an ideal choice for many applications that require high power and low EMI. It is a great choice for many power and audio applications that require accurate and reliable control. Its low on-resistance and high-frequency performance make it an excellent choice for many audio and power applications.

The specific data is subject to PDF, and the above content is for reference

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