IXFT15N100Q

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The IXFT15N100Q is a State of the Art N-Channel MOSFET designed for optimal performance in a wide range of applications. The IXFT15N100Q offers low on-state resistance RDS(on), low gate charge Qg, enhanced avalanche capability and improved current handling. All these features make the IXFT15N100Q ideal for high-efficiency DC/DC converters, AC-DC adapters and various PWM switching applications.

The IXFT15N100Q belongs to a family of N-channel Enhancement-mode Field Effect Transistors (FETs). A FET is a four-terminal device consisting of a gate, a source and a drain terminal. The transistor is operated by applying a gate voltage vgs to the gate terminal, which controls the current flow between source and drain terminals by modulating the channel resistance.

The drain current ID can be calculated using the following relation: ID = (VGS - VT) LAMDA * ut * W * L * (1 + (2*VDS/Vgs))^(-2/M),

where VGS is the gate-source voltage, VT is the threshold voltage, LAMDA is a channel length modulation coefficient, ut is the longitudinal effective mobility, W is the channel width, L is the channel length and M is the subthreshold slope factor.

The IXFT15N100Q is specifically designed for use in synchronous rectifier applications due to its extremely-low on-state resistance RDS(on). It also features a drain-source voltage rating of 100 V and low gate charge of 3.2 nC. This makes the IXFT15N100Q suitable for high current applications, up to 42 A continuous. Furthermore, the IXFT15N100Q has excellent thermal performance, with Tjmax being rated at 175°C.

The IXFT15N100Q can also be used for high voltage applications due to its low gate threshold voltage of 1.2 V and low RDS(on) performance. Additionally, the IXFT15N100Q has robust avalanche capability and superior Rg (gate resistance) which is a key feature for switching power supply applications.

When operating within the specified gatesource voltage limits, the IXFT15N100Q serves as an excellent switch for various switching applications, including power supplies, servers, engine control systems and various IGBT/MOSFET packages. In addition, the IXFT15N100Q is ideally suited for current-fed buck/boost converters, which require low on-state resistance RDS(on) and low gate charge.

In conclusion, the IXFT15N100Q is a powerful and reliable N-channel MOSFET designed for high efficiency and robust switching applications. With superior thermal performance, low onstate resistance RDS(on) and enhanced avalanche capability, it is ideal for multi-phase applications as well as current-fed converters.

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