IXFT70N20Q3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFT70N20Q3 is a n-channel TrenchFET® Power MOSFET transistor made by Infineon Technologies. It offers fast switching capabilities, low on-resistance, and low gate charge making it suitable for a wide range of medium-to-high power switching and amplification applications. This article will discuss IXFT70N20Q3\'s application field and working principle.

Application Field

The IXFT70N20Q3 was designed for medium-to-high power switching applications in automotive, industrial and SMPS applications. It is ideal for applications where low on-resistance, fast switching, and low gate charge are required. It is used in DC-DC converters, Voltage regulators, motor control, relays, high-side switching and loads switching, as well as power supplies and motor drives.

Its fast switching capabilities make it well-suited for automotive lighting applications such as headlamps, signal lamps, and vehicle dynamics control lamps. The device is used in other applications such as desktop computers, set-top boxes, HVAC systems, home appliances, and industrial motors.

It is available with standard lead-times from most reputable distributors and is a popular choice for these applications due to its low cost and high performance.

Working Principle

The IXFT70N20Q3 is a n-channel power MOSFET transistor and utilizes a TrenchFET process, combining the electrical characteristics and reliability of the traditional silicon-gate CMOS process with the thermal stability and robustness of the power-MOSFET process. The device is composed of a source, a drain and a gate. The source and drain are connected to a semiconductor material, while the gate is insulated from it.

When the device is in its open state, no current flows through it. In order to close the device, a voltage is applied to the gate, activating the transistor and allowing current to flow. The channel resistance is controlled by the applied voltage. The more voltage applied, the lower the resistance.

The IXFT70N20Q3 features an asymmetric “U-shaped” drain current versus gate-source voltage, which optimizes its area efficiency. This allows for faster switching times, improved surge capability and greater reliability. The device also features high cell density and advanced packaging technologies, providing further improved thermal and mechanical performance.

The device has low gate charge and low on-resistance which makes it ideal for medium-to-high power switching applications where high power availability is required. The device is protected against high temperature, voltage and current limits, providing reliability and robustness even in harsh operating environments.

Conclusion

The IXFT70N20Q3 is a n-channel TrenchFET® Power MOSFET transistor made by Infineon Technologies. It was designed for medium-to-high power switching applications including automotive lighting, industrial motors, DC-DC converters, voltage regulators, and home appliances. It features low on-resistance, low gate charge, fast switching capability and asymmetric U-shaped drain current versus gate-source voltage. It also has high temperature, voltage and current protection, making it suitable for harsh environments. It is a popular choice for these applications due to its low cost and high performance.

The specific data is subject to PDF, and the above content is for reference