IXFT13N100

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFT13N100 is a single N-Channel Enhancement Mode Power MOSFET transistor.

The function of the IXFT13N100 is to control the power that is supplied to a load. It does this by providing a gate voltage threshold to the load, which then determines how much power is provided by the MOSFET. This gate voltage threshold will vary depending on the application and can be adjusted, allowing for a greater or lesser amount of power supplied to the load.

IXFT13N100 Power MOSFET transistors are made from Gallium Nitride on Silicon Carbide (GaN-on-SiC). GaN-on-SiC transistors offer high power performance, high speed switching and extreme temperature operation.

These transistors are suitable for switching applications such as motor control, computer power supplies, or power conversion; or they can be used as power amplifiers in audio applications. As they are capable of handling large amounts of power and operating at low gate voltages, they can be used in Voltage Multiplier Circuits, which are useful in power conversion applications.

In order to operate the IXFT13N100 MOSFET, a small voltage is required to turn on the transistor. This voltage is known as the gate-source threshold voltage and is typically 1.8 V. Once this voltage is applied to the gate terminal, the transistor allows for a predetermined amount of current to pass through to the load.

When the gate-source threshold is met, the transistor begins to turn on. This is known as the “Subthreshold Conduction” stage. At this point, the transistor is said to be in the “on-state”. The current will then increase in a linear fashion until it reaches its maximum rating, which is determined by the number of current paths for the device. When the maximum current threshold is reached, the MOSFET enters the “saturation” stage, which is the most efficient operating point of the device.

When the IXFT13N100 transistor is in the “off-state”, no current can pass through the transistor, thus no power is provided to the load. This is because the gate-source threshold voltage has been exceeded and the transistor will not turn on. In order to turn off the transistor, the voltage applied to the gate terminal needs to be lowered below the threshold voltage, thus shutting off the path between the source and the drain.

The IXFT13N100 is a versatile MOSFET that can be used in a variety of applications. Its high power and temperature capabilities make it an excellent choice for power conversion and motor control applications. Additionally, its low gate-source threshold voltage makes it ideal for use in Voltage Multiplier Circuits.

The specific data is subject to PDF, and the above content is for reference