IXFT26N50Q Allicdata Electronics
Allicdata Part #:

IXFT26N50Q-ND

Manufacturer Part#:

IXFT26N50Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 26A TO-268
More Detail: N-Channel 500V 26A (Tc) 300W (Tc) Surface Mount TO...
DataSheet: IXFT26N50Q datasheetIXFT26N50Q Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFT26N50Q is a field-effect transistor (FET) used for a variety of electrical circuit applications. It is a single type FET that operates with a metallic oxide semiconductor (MOS) technology. The IXFT26N50Q is often used in areas such as power supply circuits, logic circuits, and DC/DC converters. It is also used in various audio and radio frequency (RF) circuits.

The IXFT26N50Q is a type of insulated-gate bipolar transistor (IGBT). It is a three-terminal device whose basic construction consists of two separate channel regions reaching under the main current path. The IXFT26N50Q is a unipolar device meaning it can only be used in conjunction with a voltage source, meaning the drain and source regions should be of the same potential. The gate terminal is the control mechanism that, when correctly polarized, can allow the flow of current between the drain and source regions.

The IXFT26N50Q works on the principle of controlling an electric current with an electric field. In electrical engineering, a field-effect transistor is a type of transistor that uses an electric field to control the movement of electrons. An electric field is created by positively charged ions near the substrate of the FET. This electric field can be adjusted by changing the voltage applied to the gate terminal, which in turn will then adjust the conductivity of the material between the source and drain. This is achieved by increasing or decreasing the width of the channel which allows the passage of current.

The IXFT26N50Q comes with a number of features that make it well-suited for many applications. It is an insulated-gate FET, meaning that it carries no gate current when the gate voltage is in the off-mode and does not require a large amount of power to turn on. Additionally, it has a low on-resistance and a linear operation region. This allows for more efficient operation and more precise control over current flow. Lastly, the IXFT26N50Q comes with a low gate charge, meaning less power is needed to switch the device.

The IXFT26N50Q is a great option for a wide range of applications including power supply circuits, logic circuits, DC/DC converters, audio and RF circuits. It has some remarkable features such as low on-state resistance, low gate charge, and a linear operation region. Additionally, it carries no gate current when in off-mode and requires less power than other FETs to turn on. With its diverse range of features, the IXFT26N50Q is an incredibly useful device for many electrical circuits.

The specific data is subject to PDF, and the above content is for reference

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