IXFT120N30X3HV Allicdata Electronics
Allicdata Part #:

IXFT120N30X3HV-ND

Manufacturer Part#:

IXFT120N30X3HV

Price: $ 9.86
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: 300V/120A ULTRA JUNCTION X3-CLAS
More Detail: N-Channel 300V 120A (Tc) 735W (Tc) Surface Mount T...
DataSheet: IXFT120N30X3HV datasheetIXFT120N30X3HV Datasheet/PDF
Quantity: 28
1 +: $ 8.97120
30 +: $ 7.54593
120 +: $ 6.93422
510 +: $ 5.91445
Stock 28Can Ship Immediately
$ 9.86
Specifications
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268HV
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 735W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10.5nF @ 25V
Vgs (Max): ±20V
Series: HiPerFET™
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Rds On (Max) @ Id, Vgs: 11 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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IXFT120N30X3HV is a high temperature insulated gate field effect transistor (IGFET), also known as a “metal-oxide-semiconductor field-effect transistor” (MOSFET). It is the most common type of transistor used today and is the most popular transistor choice for commercial, industrial, and automotive applications when high voltage, high current and low on-state resistance is called for. IXFT120N30X3HV is a 30V transistor with a low gate threshold voltage.

IGFETs are solid-state semiconductor devices with three main terminals: gate, drain and source. The device can be thought of as a switch or a valve, as it can be turned ON or OFF. When the voltage at the gate is made more positive than the voltage at the source, the device is switched ON and a current will be allowed to pass between source and drain terminals.

A MOSFET is used for various applications such as for switching, amplifying and voltage regulation. A MOSFET’s highinput impedance makes it suitable for high frequency applications. It can be used for power switching, motor control, RF power amplifiers and power supply control. It can also be used in many different types of motor control circuits, such as motor speed control, motor drive circuits and motor control systems.

MOSFETs are especially suitable for high voltage/high frequency applications due to their high voltage breakdown voltage, low gate threshold voltage and low on-state resistance. IXFT120N30X3HV is a 30V transistor that has an excellent gate threshold voltage. This makes it ideal for high-temperature, high-frequency, and high-voltage applications.

MOSFETs have an advantage over BJTs (bipolar junction transistors) because they exhibit less gate leakage current and are faster than BJTs. They are also suitable for signal processing applications such as signal amplifiers, audio amplifiers and active filter circuits.

MOSFETs have a number of advantages over other types of transistors. They are more efficient, generate less heat and are more suitable for signal processing applications. IXFT120N30X3HV is a cost-effective solution for high-voltage, high-frequency and high-temperature applications.

The specific data is subject to PDF, and the above content is for reference

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