| Allicdata Part #: | IXFT170N25X3HV-ND |
| Manufacturer Part#: |
IXFT170N25X3HV |
| Price: | $ 11.98 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 250V 170A TO268HV |
| More Detail: | N-Channel 250V 170A (Tc) 960W (Tc) Surface Mount T... |
| DataSheet: |  IXFT170N25X3HV Datasheet/PDF |
| Quantity: | 175 |
| 1 +: | $ 10.88640 |
| 30 +: | $ 9.15432 |
| 120 +: | $ 8.41218 |
| Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268HV |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 960W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 13500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 7.4 mOhm @ 85A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 170A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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,The IXFT170N25X3HV is a high voltage, high current trench MOSFET device. Its advanced trench design and process technology provide efficient, reliable switching performance. This MOSFET device is part of the IXYS IXFT family of devices and is suitable for a variety of applications including power supplies, DC-to-DC converters, inverter circuits, and motor control.
The IXFT170N25X3HV is a 250V, 160A rated MOSFET die, packaged in an industry standard IT-177F package. It has an energy rating of 3.5W and a drain-source on resistance of 170mΩ. The MOSFET features low gate charge and average gate charge, as well as a negative temperature coefficient of the on resistance (RDS(on)).
The working principle of the IXFT170N25X3HV involves a strong electric field between the drain and source of the MOSFET. This electric field is generated when a gate voltage is applied to the MOSFET, creating a region of high density electrons or "holes" between the drain and source. When the gate voltage is increased it creates a higher electric field, which creates a stronger attraction of electrons to the source, thereby increasing the MOSFET\'s drain-source current.
The IXFT170N25X3HV has a variety of applications in industrial power supplies, charging circuits, DC-DC converters, SMPS, lighting controls and motor control. It can be used in applications where high voltage and high current are needed, such as industrial power supplies, battery chargers, automotive applications and even avionic systems. Its advanced trench design also makes it ideal for operation in high temperature, high-frequency applications.
In summary, the IXFT170N25X3HV is a powerful and reliable MOSFET device for use in a variety of applications. Its advanced trench design and process technology make it an excellent choice for high voltage, high current applications. Its wide range of applications and its low on-state resistance make it an ideal choice for a number of different applications.
The specific data is subject to PDF, and the above content is for reference
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