IXFT50N60P3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFT50N60P3 is one of the most popular and widely used MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) types in the electronics market today. It is a medium power MOSFET with an insulated-gate field-effect design and offers a remarkably high on-state drain current for its small size and weight. The IXFT50N60P3 is a bipolysilicon N-type MOSFET, with a configuration of a source-drain channel.

Applications

The IXFT50N60P3 has a wide variety of uses in the industry. Its high current operation and low ON-state resistance enables it to switch relatively high power loads such as DC motors, thereby allowing it to be used in a motor driver circuit. Its moderate voltage rating allows it to be used in high-voltage switching applications such as dimming control for LED lighting. High-speed switching applications for which the IXFT50N60P3 is well-suited include chargers for power tool batteries, as well as power supplies and inverters. In addition, it is also an ideal choice for industrial and consumer applications such as air conditioners, heating systems, kitchen appliances, and general electronic equipment.

Working Principle

The IXFT50N60P3 is based on the principle of the insulated-gate field-effect design. This means it is a type of insulated-gate field-effect transistor, where the gate is insulated from the rest of the transistor. It requires a voltage to be applied to the gate in order to create a potential difference between it and the drain and source. This turns on the MOSFET, allowing current to flow between the drain and source.

The N-channel type IXFT50N60P3 has the gate-source circuit connected to the drain-source by diffusion of the N-type dopants in the channel region. When a negative voltage is applied to the gate, the channel region is induced with a negative voltage, causing electrons to become drawn into the channel region from a negative source, consequently making the channel conductive and allowing the drain current to flow. When the voltage applied at the drain is less than the threshold voltage (typically -4V for the IXFT50N60P3), the channel region is reversed biased and the drain current is cut off.

Conclusion

The IXFT50N60P3 has become one of the most popular and widely used MOSFETs in the industry due to its high current operation and low ON-state resistance. Its wide range of applications span both consumer and industrial products, with its use particularly well-suited for high-speed switching and high-power switching applications. The working principle of the IXFT50N60P3 is based on the insulated-gate field-effect design, where it requires a voltage to be applied to the gate in order to create a potential difference between it and the drain and source.

The specific data is subject to PDF, and the above content is for reference