IXFT150N20T Allicdata Electronics
Allicdata Part #:

IXFT150N20T-ND

Manufacturer Part#:

IXFT150N20T

Price: $ 9.63
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 150A TO-268
More Detail: N-Channel 200V 150A (Tc) 890W (Tc) Surface Mount T...
DataSheet: IXFT150N20T datasheetIXFT150N20T Datasheet/PDF
Quantity: 1000
30 +: $ 8.75238
Stock 1000Can Ship Immediately
$ 9.63
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 890W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Series: HiPerFET™, TrenchT2™
Rds On (Max) @ Id, Vgs: 15 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFT150N20T is a type of field-effect transistor (FET) specifically designed for use in high-performance switching applications. In addition to applications in power MOSFETs, the IXFT150N20T can also be used in circuitry for fast switching between high and low impedances, making it useful for voltage-controlled oscillators, power logic-level switches, and time-domain reflectometers.

A field-effect transistor is a type of transistor that relies on electric field effects to operate rather than traditional semiconductor junctions. FETs work using a gate to control the flow of a current between the source and drain terminals. A gate terminal is used to control the flow of current to the drain terminals, which are generally larger than the source terminals. As the voltage across the gate terminal changes, the current passing through the drain terminals also changes. This allows FETs to switch between off and on states quickly and accurately.

The IXFT150N20T has several key features that make it suitable for high switching applications. It has a charge carrier mobility of 150cm2/Vs, a low on-state resistance of 2ohms, and a threshold voltage of 8V. This means that the IXFT150N20T can quickly and accurately switch between its on and off states, making it useful for applications that require fast switching between high and low impedances.

In addition to its fast switching capabilities, the IXFT150N20T also has low gate capacitance and gate charge. The low gate capacitance means that the IXFT150N20T requires less energy to turn on and off. The low gate charge means that the IXFT150N20T does not become charged up when its off state, which reduces the amount of time it takes to switch the device on and off.

The IXFT150N20T is specifically designed for switching between high and low impedances. This makes it especially suitable for voltage-controlled oscillators, power logic-level switches, and time-domain reflectometers. In a voltage-controlled oscillator, the IXFT150N20T can be used as a switch to control the frequency of the oscillator. In a power logic-level switch, the IXFT150N20T can be used to quickly switch between high and low polarities. In a time-domain reflectometer, the IXFT150N20T can be used to switch between high and low impedance components.

In conclusion, the IXFT150N20T is a field-effect transistor specifically designed for use in high-performance switching applications. It has a high charge carrier mobility and low on-state resistance, allowing it to quickly and accurately switch between its on and off states. It is especially useful for voltage-controlled oscillators, power logic-level switches, and time-domain reflectometers.

The specific data is subject to PDF, and the above content is for reference

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