| Allicdata Part #: | IXFT150N20T-ND |
| Manufacturer Part#: |
IXFT150N20T |
| Price: | $ 9.63 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 150A TO-268 |
| More Detail: | N-Channel 200V 150A (Tc) 890W (Tc) Surface Mount T... |
| DataSheet: | IXFT150N20T Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 8.75238 |
| Vgs(th) (Max) @ Id: | 5V @ 4mA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 890W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 11700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 177nC @ 10V |
| Series: | HiPerFET™, TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 15 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFT150N20T is a type of field-effect transistor (FET) specifically designed for use in high-performance switching applications. In addition to applications in power MOSFETs, the IXFT150N20T can also be used in circuitry for fast switching between high and low impedances, making it useful for voltage-controlled oscillators, power logic-level switches, and time-domain reflectometers.
A field-effect transistor is a type of transistor that relies on electric field effects to operate rather than traditional semiconductor junctions. FETs work using a gate to control the flow of a current between the source and drain terminals. A gate terminal is used to control the flow of current to the drain terminals, which are generally larger than the source terminals. As the voltage across the gate terminal changes, the current passing through the drain terminals also changes. This allows FETs to switch between off and on states quickly and accurately.
The IXFT150N20T has several key features that make it suitable for high switching applications. It has a charge carrier mobility of 150cm2/Vs, a low on-state resistance of 2ohms, and a threshold voltage of 8V. This means that the IXFT150N20T can quickly and accurately switch between its on and off states, making it useful for applications that require fast switching between high and low impedances.
In addition to its fast switching capabilities, the IXFT150N20T also has low gate capacitance and gate charge. The low gate capacitance means that the IXFT150N20T requires less energy to turn on and off. The low gate charge means that the IXFT150N20T does not become charged up when its off state, which reduces the amount of time it takes to switch the device on and off.
The IXFT150N20T is specifically designed for switching between high and low impedances. This makes it especially suitable for voltage-controlled oscillators, power logic-level switches, and time-domain reflectometers. In a voltage-controlled oscillator, the IXFT150N20T can be used as a switch to control the frequency of the oscillator. In a power logic-level switch, the IXFT150N20T can be used to quickly switch between high and low polarities. In a time-domain reflectometer, the IXFT150N20T can be used to switch between high and low impedance components.
In conclusion, the IXFT150N20T is a field-effect transistor specifically designed for use in high-performance switching applications. It has a high charge carrier mobility and low on-state resistance, allowing it to quickly and accurately switch between its on and off states. It is especially useful for voltage-controlled oscillators, power logic-level switches, and time-domain reflectometers.
The specific data is subject to PDF, and the above content is for reference
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IXFT150N20T Datasheet/PDF