IXFT26N50 Allicdata Electronics
Allicdata Part #:

IXFT26N50-ND

Manufacturer Part#:

IXFT26N50

Price: $ 7.01
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 26A TO-268
More Detail: N-Channel 500V 26A (Tc) 300W (Tc) Surface Mount TO...
DataSheet: IXFT26N50 datasheetIXFT26N50 Datasheet/PDF
Quantity: 1000
30 +: $ 6.31216
Stock 1000Can Ship Immediately
$ 7.01
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFT26N50 is a MOSFET transistor, also known as a metal-oxide semiconductor field-effect transistor, that is often used as a power switch in various electronics applications. Unlike other transistors, a MOSFET transistor is an unipolar device, meaning that it carries either a positive or a negative charge. Due to its low on-state resistance and fast switching speed, the IXFT26N50 is becoming increasingly popular for use in power switches. The device offers high performance in terms of switching capabilities and high power. This article provides an overview of the IXFT26N50 application fields and its working principle.

IXFT26N50 Application Fields

The IXFT26N50 has become increasingly popular for use in power switches due to its low on-state resistance and fast switching speed. It can be used for a wide range of applications, such as industrial motor control, power conversion, lighting control, and automotive applications. The IXFT26N50 transistor can also be used in remote controls, portable electronic devices, battery-operated systems, and DC-DC converters.

IXFT26N50 Working Principle

The IXFT26N50 is a depletion-mode MOSFET transistor, which means that it is normally “on”, allowing current to flow between its source and drain when a voltage is applied. The IXFT26N50 has a source, gate and drain that is connected to the source by a dielectric material, such as silicon dioxide. At the interface between the source and gate, the device uses a “channel” to conduct an electrical current. Applying a small voltage to the gate of the IXFT26N50 induces an electric field in the semiconductor channel between the source and the drain, which depletes the channel of charges and thus prevents current from flowing. The voltage must be greater than the threshold voltage for the device to remain fully “on” and allow current to flow. When the voltage is reduced below the threshold voltage, the device turns “off” and the current stops flowing.

Conclusion

To sum up, the IXFT26N50 is an increasingly popular MOSFET transistor that is used for various electronic applications due to its low on-state resistance and fast switching speed. It has a source, gate and drain that is connected by a dielectric material, and the source and gate use a “channel” to conduct electrical current. By applying a small voltage to the gate of the IXFT26N50, an electric field is induced in the channel between the source and the drain which depletes the channel of charges and thus prevents current from flowing. The device can be used for a wide range of applications, such as industrial motor control, power conversion, lighting control, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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