Vgs(th) (Max) @ Id:	6.5V @ 1mA
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	660W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7300pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	126nC @ 10V
Series:	HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs:	570 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFT20N100P Application Field and Working Principle

IXFT20N100P is a type of insulated gate bipolar transistor (IGBT) which is used as a power switching device. The IXFT20N100P is a part of the IXFT20N family of IGBTs developed by IXYS Corporation. This family of IGBTs is designed for applications where high efficiency and low switching losses are required.The IXFT20N100P features a maximum collector-emitter voltage (Vce) of 100V, a collector current (Ic) of 20A, and a Gate-Emitter Voltage (Vge) of 20V. The IXFT20N100P has a high surge current handling capability of 150A and a low on-state and on-to-off transition time of 3.2ns and 8.2ns respectively. It also has a high breakdown voltage of 800V and a drain-source dV/dt of 500V/µs.The IXFT20N100P is suitable for use in applications such as DC-DC converters, switch-mode power supplies, motor-control systems and uninterruptible power supplies (UPS). It is also suitable for applications such as solar and wind power inverters, power factor correction systems and high-power switching applications.The working principle of an IGBT is based on the same principle as a MOSFET. In a MOSFET, the gate voltage controls the current flow between the source and the drain. Similarly, in an IGBT, the gate voltage controls the current flow between the emitter and the collector. An IGBT has an additional layer of P-type semiconductor between the gate and the emitter which helps to control the current conduction.When the gate voltage is applied, the electrons in the emitter layer flow through the P-type layer and into the collector layer. This creates a conducting path between the emitter and the collector, allowing current to flow through the device. When the gate voltage is removed, the electrons are forced out of the P-type layer and back into the emitter layer, disrupting the conducting path between the emitter and the collector and turning off the device.The IXFT20N100P is an effective device for high efficiency and low switching losses due to its high surge current handling capability and low on-state and on-to-off transition times. Additionally, the high breakdown voltage of 800V and drain-source dV/dt of 500V/µs mean that it is suitable for a wide range of applications, such as DC-DC converters, switch-mode power supplies, motor-control systems and solar and wind power inverters.

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