| Allicdata Part #: | IXFT86N30T-ND |
| Manufacturer Part#: |
IXFT86N30T |
| Price: | $ 4.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 300V 86A TO268 |
| More Detail: | N-Channel 300V 86A (Tc) 860W (Tc) Surface Mount TO... |
| DataSheet: |  IXFT86N30T Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 4.36653 |
| Vgs(th) (Max) @ Id: | 5V @ 4mA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 860W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 11300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| Series: | HiPerFET™, TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 43 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 86A (Tc) |
| Drain to Source Voltage (Vdss): | 300V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFT86N30T is a single N-Channel type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed to deliver high performance with a maximum power dissipation of 250W, with a maximum drain-source on-state resistance of 8 ohms as well as a low drain capacitance. It is suitable to be used in various applications, such as driving power devices, low frequency and high speed switching applications.
The IXFT86N30T is designed with a vertical structure that is consisting of two mesa layers that are placed on top of each other, separated by a field oxide layer. This design enhances the dissipation of heat and allows higher power capacity. In addition to this, the device has a N-type gate structure which prevents gate degradation.
As for the IXFT86N30T’s working principle, it operates as a voltage–controlled switch. When a gate voltage is applied, it will induce an electric field across the gate oxide, which will modulate the current flow between the source and the drain. By controlling the gate voltage, the current flow can be varied, allowing the IXFT86N30T to function as either an amplifier or a switch.
The IXFT86N30T has various applications and is suitable to be used in a wide range of projects, ranging from high-frequency switching to low-frequency switching, or power applications. In addition to this, it can also be used to drive power devices, such as light bulbs, motors, and other power equipment. Its high current capability and low turn-on and turn-off times makes it ideal for use in high-frequency switching applications.
The IXFT86N30T is an all-around MOSFET that is designed to offer high performance with a low cost. It is easy to install, and it is a dependable solution for a variety of different applications. So if you’re looking for an efficient and reliable MOSFET for your projects, the IXFT86N30T is certainly worth considering.
The specific data is subject to PDF, and the above content is for reference
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