IXFT400N075T2 Allicdata Electronics
Allicdata Part #:

IXFT400N075T2-ND

Manufacturer Part#:

IXFT400N075T2

Price: $ 7.97
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 400A TO-268
More Detail: N-Channel 75V 400A (Tc) 1000W (Tc) Surface Mount T...
DataSheet: IXFT400N075T2 datasheetIXFT400N075T2 Datasheet/PDF
Quantity: 1000
30 +: $ 7.17066
Stock 1000Can Ship Immediately
$ 7.97
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1000W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
Series: GigaMOS™, HiPerFET™, TrenchT2™
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FETs, or Field Effect Transistors, are widely used in various electronic circuits. The IXFT400N075T2 is a FET, or Field-Effect Transistor, which is a special type of transistor that relies on electric fields. It is a single-gate type device and is widely used in various applications across the industry.

The IXFT400N075T2 is a FET with a maximum Drain-Source Voltage (VDS) of 400V (VGS of ±20V), an RDS(ON) of 17mΩ (typical @ 4.5V). It also offers a max drain current ID of 75A (TC = 25°C) and reverse transfer capcitance CISS of 24040 pF (typical @ 0V, f = 1MHz).

The IXFT400N075T2 is widely used in applications that require high power handling capabilities such as motor control and power conversion. It is also used in power management, automotive and lighting systems. Its fast switching characteristics make it indispensable for switching mode power supplies, lighting ballasts and flyback power converters with high efficiency.

The working principle of the IXFT400N075T2 can be understood by looking at its basic structure. It is made up of three components – a source, a drain and a gate. The source of the IXFT400N075T2 is connected to the positive source and the drain is connected to the negative source. When a voltage is applied to the gate, an electric field is generated. This electric field causes electrons to move from the source to the drain, allowing current to flow through the transistor. The current flow can be controlled by varying the voltage applied to the gate.

The IXFT400N075T2 is an ideal choice for applications that require fast switching and high power handling capabilities. It is capable of withstanding high voltages and off times, and its low on-resistance ensures high efficiency power conversion. Its fast switching characteristics make it ideal for switching mode power supplies, lighting ballasts and flyback power converters.

The specific data is subject to PDF, and the above content is for reference

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