IXFT60N50P3 Allicdata Electronics
Allicdata Part #:

IXFT60N50P3-ND

Manufacturer Part#:

IXFT60N50P3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 60A TO268
More Detail: N-Channel 500V 60A (Tc) 1040W (Tc) Surface Mount T...
DataSheet: IXFT60N50P3 datasheetIXFT60N50P3 Datasheet/PDF
Quantity: 18
Stock 18Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1040W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFT60N50P3 is a vertical N-channel MOSFET transistor that has an industry-standard TO-220 packaging. It is designed for applications requiring high current handling, low gate charge, and low leakage capability. The IXFT60N50P3 is a Power MOSFET transistor, which is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It uses metal-oxide-semiconductor technology to amplify or switch electronic signals and can control large currents. This makes it suitable for applications such as low-frequency power amplification, power switching, and voltage regulation.

The IXFT60N50P3 is a 60 A, 500 V, N-channel power MOSFET. It has a typical on-state resistance of 0.14 Ω and a maximum drain-source avalanche that can handle 55.8 A. It has low gate charge (typical 12 nC) that reduce switching time, reducing power losses. Its temperature range goes from -55 °C to 150 °C, making it suitable for a wide range of applications.

The IXFT60N50P3 is designed primarily for power switching applications and device protection against high-voltage, high-current events and to improve system reliability. Some of the applications it can be used for include DC to DC converters, relay drivers, switching regulators, motor control circuits, lamp and LED drivers, load switch and product protection, and AC/DC rectifiers.

The IXFT60N50P3 has two basic characteristics: the body diode and the drain-source voltage. The body diode is an intrinsic diode and is found in most power MOSFETs. It is a PN junction, which conducts current in the reverse direction when the Drain-Source Voltage is turned off. The voltage rating refers to the maximum voltage that can be supported between the drain and source pins of the device. This voltage is specified as the maximum Drain-Source Voltage (VDS).

To understand the working principle of the IXFT60N60P3, it is important to understand the basic concept of the MOSFET. The MOSFET is a four-terminal device, consisting of the drain, source, gate and substrate. When a voltage is applied to the gate, a conducting channel is created between the drain and source. This conducting channel allows current to flow, and can be controlled by the application of different gate voltages. By controlling the gate voltage, the current flow can be increased or decreased, which is used in switching applications.

The IXFT60N60P3 is an N-channel MOSFET, which means the channel is formed by a positive voltage on the gate terminal. As the voltage on the gate increases, the channel is widened and current flows more freely. This allows the IXFT60N60P3 to be used as a high current, low gate charge switch in switching applications.

Overall, the IXFT60N60P3 is a handy and useful device suitable for many applications. It is a versatile switch with high current handling, low gate charge and temperature range, making it suitable for a wide range of applications such as switching regulator, motor control, and product protection. It is an excellent choice for an efficient and reliable power switch.

The specific data is subject to PDF, and the above content is for reference

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