Allicdata Part #: | IXFT14N80P-ND |
Manufacturer Part#: |
IXFT14N80P |
Price: | $ 4.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 14A TO-268 |
More Detail: | N-Channel 800V 14A (Tc) 400W (Tc) Surface Mount TO... |
DataSheet: | IXFT14N80P Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 3.86169 |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 61nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 720 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFT14N80P is a part of a larger family of insulated gate bipolar transistors (IGBTs). It is a field effect transistor (FET) consisting of three terminals: source, gate and drain. It has higher efficiency and superior switching performance compared to traditional bipolar transistors.
The IXFT14N80P is a N-channel enhancement mode FET. It is capable of switching very high frequencies, occupying minimal PCB space and field of operation environment to make it suitable for industrial and commercial applications. Being an enhancement-mode device, it has a very low OFF state gate-source leakage current, resulting in a low quiescent power consumption. These benefits make the IXFT14N80P suitable for applications such as switch mode power supplies, dc-to-dc controller, and other power management applications.
When a positive voltage is applied to the gate of the IXFT14N80P, a conductive channel forms between the source and drain and allows current to flow. This is known as the \'ON\' state and is represented by the symbol ‘1’ in the logic. The drain voltage and drain current can range up to 100V and 5A respectively. When there is no gate voltage applied, the device switches to its \'OFF\' state and there is no conduction between the source and drain channel.
The working principle of the IXFT14N80P is based on the modulation of its gate-source capacitance by applying a gate voltage. The gate-source capacitance between the gate and the source increases when the voltage applied is higher and when the voltage applied is lower, the capacitance decreases. This creates an effect similar to a variable resistor, where the resistance of the device is being changed by adjusting the gate voltage and thus, the current flow can be regulated.
The IXFT14N80P is designed for industrial and commercial applications to increase system efficiency and deliver superior performance. Its N-channel design makes it suitable for a variety of high-frequency switching applications where space and the environment are a consideration. The advantages of the IXFT14N80P also make it useful for power management applications such as switch mode power supplies and dc-to-dc controllers.
The specific data is subject to PDF, and the above content is for reference
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