IXFT18N90P

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The IXFT18N90P is an advanced power MOSFET manufactured by IXYS Corporation. It has a drain–source breakdown voltage (BVDSS) of 900 volts, a maximum surge drain current of 155 amps, and a maximum drain current of 52 amps. This device is suitable for use applications that require high speed switching and high breakdown voltage such as motor control, solar power maximum power point tracking, motor overload protection, and AC power switching applications.

MOSFETs are three-terminal, voltage-controlled semiconductor devices. The three terminals are the gate (G), the source (S) and the drain (D). MOSFETs are divided into two categories, N-channel and P-channel. The IXFT18N90P is an N-channel MOSFET. The ‘N’ signifies that it is an N-type MOSFET which requires a negative voltage between the gate and source for the MOSFET to be in its conducting state.

The IXFT18N90P is a unipolar device, meaning it is only conductive in one direction. It is a single MOSFET, meaning it has a single source, drain, and gate. The source is where electrons enter the MOSFET and the drain is where the electrons exit the MOSFET.

In operation, the IXFT18N90P is a voltage-controlled device. By applying a voltage to the gate, the device can be switched between its two states, on and off. When the gate voltage is more positive than the source by at least 5 volts, the device is turned on and allows current to flow. When the gate voltage is less positive than the source, the device is turned off and current is blocked.

The IXFT18N90P is designed to switch high frequencies and its high breakdown voltage can handle large voltage swings. This allows the device to be used in a variety of control and switching applications. The IXFT18N90P is capable of operating at up to a maximum of 250kHz and due to its low RDS(ON) value, it can handle higher peak input currents. The low on-resistance also improves efficiency, resulting in lower energy consumption.

The IXFT18N90P is physically very small, making it suitable for space-critical applications. Its low capacitance also allows it to be used for fast switching applications. The device is available in a surface-mount package, making it easy to incorporate into PCBs.

In summary, the IXFT18N90P is a high-speed, high-breakdown voltage power MOSFET suitable for applications such as solar power maximum point tracking, overload protection, and AC switching. This device is ideal for applications which require a very small package, high speed switching, and/or high breakdown voltage. With its fast switching capability and low on-resistance, the IXFT18N90P is an excellent choice for those applications.

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