IXFT30N50

Series:	HiPerFET™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	160 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:	300nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5700pF @ 25V
FET Feature:	--
Power Dissipation (Max):	360W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-268
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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IXFT30N50 Application Field and Working Principle

The IXFT30N50 is a type of one of the most common series of transistors available - the high-power Insulated Gate Bipolar Transistors (IGBT). It is a single-phase, normally-off device, which provides a high switching speed, low on-state loss and better immunity to short circuit than other commercial power transistors. This makes it suitable for use in high-voltage applications such as AC/DC power supply and motor drive systems. This article will explain the IXFT30N50\'s application field and working principle.
The IXFT30N50 is part of a family of IGBTs from IXYS Corporation and is based on a unique, high power IGBT process. The device is rated at 30 Amps and can be operated with a voltage between 600 and 1500 Volts. It also has a peak repetitive reverse voltage of 1000 Volts, which makes it suitable for switching high-voltage loads in a variety of industrial and automotive applications.
The most common applications of the IXFT30N50 are motor control, DC/DC conversion and AC/DC power supplies. Its high power capabilities make it suitable for controlling high power loads, while its low on-state loss can help reduce losses in the power supply system. In addition, the IXFT30N50 has a fast switching speed, which makes it useful for applications requiring a high degree of control, such as variable speed motors and servo systems.
The IXFT30N50 is a standard, single-pole device which has a limited number of pins. The three main connection terminals are the emitter (E), collector (C) and gate (G). The emitter and collector are used to connect the device to the power source, while the gate is connected to the control input. The device is normally-off and the gate voltage must be positive in order to turn it on. Once the gate voltage is on, the device will remain on until the gate voltage is reduced below the threshold voltage.
The IXFT30N50 operates with two distinct modes of operation: linear or saturation. In linear mode, the device acts like a resistor, where the collector-emitter voltage is proportional to the gate voltage. In saturation mode, the collector-emitter voltage will remain constant, regardless of the gate voltage. This mode allows the IXFT30N50 to operate at its maximum power level and is useful for controlling high power loads.
An important safety feature of the IXFT30N50 is its over-temperature protection (OTP). This feature is designed to protect the device from overheating, which could lead to destructive thermoelectric breakdown. If the device reaches a certain temperature, the OTP will kick in and shut off the device until the temperature has cooled to a safe level.
The IXFT30N50 is an excellent choice for high power applications, providing a high switching speed, low on-state loss and good immunity to short circuit. The device is also safe to use, as it is equipped with an over-temperature protection feature to prevent thermoelectric breakdown. With its wide range of applications and features, the IXFT30N50 is an ideal solution for controlling high power loads.

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