Allicdata Part #: | IXFT70N15-ND |
Manufacturer Part#: |
IXFT70N15 |
Price: | $ 6.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 70A TO-268 |
More Detail: | N-Channel 150V 70A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXFT70N15 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 5.97051 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFT70N15 is a single N-Channel Enhanced Junction Field Effect Transistor (EJFET) that is ideally suited for use in applications requiring low power, low-noise impedance conversion. IXFT70N15 combines EJFET\'s superior low input capacitance and noise performance with excellent linearity and low gain variation. IXFT70N15 has a very small but stable Base Charge Storage Capacitance (Cbs) and can be used with very high gate capacitance. In addition, IXFT70N15 has excellent switching characteristics. These features make it a good choice for circuit designers looking for an efficient, low-power solution for their needs.
The operating principle of IXFT70N15 can be described roughly as follows: Current flows through the drain and source when a positive gate voltage is applied. When the gate voltage is increased, the current passing through the FET increases and therefore the drain-source resistance decreases. At a certain gate voltage, the current passing through the FET reaches its maximum. This voltage is known as the pinch-off voltage. When the gate voltage increases further, the drain-source resistance increases again until the FET is completely cut off. The maximum current passing through the FET at this point is the saturation current. In summary, IXFT70N15 allows for both linear and saturated modes of operation.
It should be noted that the dynamic on-resistance of IXFT70N15 is typically 8-25 ohms. This resistance is mainly determined by the channel resistance and the output capacitance. The output capacitance is dependent on the input capacitance and the gate resistance. The drain-source and gate-source capacitances should be considered when calculating the turn on and turn off times of IXFT70N15.
The most common application of IXFT70N15 is in linear regulators. The device is used as a sensing element that compares the input voltage to the output voltage. When the output voltage drops, the device turns on and increases the output current in order to maintain the voltage. This allows the output voltage to be very precisely regulated. By using multiple devices in parallel, the current handling capability of the circuit can be increased.
IXFT70N15 has some other applications such as amplifier and oscillator circuits, switch mode power supplies, RF power amplifiers, ESD protection, and load switching. In particular, IXFT70N15 is well-suited for low-power and low-noise applications. This is due to its low input capacitance, low gate resistance, and low noise figure.
It is important to keep in mind that IXFT70N15 has a maximum voltage rating of 200V and a maximum current rating of 10A. Also, the temperature range should be taken into account when designing circuits involving IXFT70N15. Therefore, before designing a circuit with IXFT70N15, it is necessary to consider the voltage and current ratings, as well as the temperature range of the application.
In short, IXFT70N15 is a low-power, low-noise single N-Channel EJFET. It is suited for applications requiring precise regulation and low power consumption. It is suitable for use in linear regulators, amplifier and oscillator circuits, switch mode power supplies, RF power amplifiers, ESD protection, and load switching.
The specific data is subject to PDF, and the above content is for reference
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