IXFT80N30P3

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Part Status:	Active

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The IXFT80N30P3 is a product developed by IXYS Corporation, and it is classified as a Single Insulated Gate Bipolar Transistor (IGBT). This device offers excellent conduction and switching performance while maintaining high-speed operation and stability. In addition, the IXFT80N30P3 features a low on-resistance and low power consumption, making it a good choice for a wide range of applications.The IXFT80N30P3 is usually found in applications where power conversion and control is needed. These include motor speed, industrial controls, and power supply switching. The device is also used in many other areas, such as temperature and pressure sensors and AC/DC converters. The IXFT80N30P3 is also ideal for motor drives, battery chargers and automotive applications.The IXFT80N30P3 works through the same principle as other insulated-gate bipolar transistors (IGBT). When the gate voltage rises above the threshold voltage, the device switches on and current will flow from collector to emitter. When the gate voltage drops below the threshold voltage, the device switches off and current stops flowing.The IXFT80N30P3 has a maximum drain-source voltage of 800V and a maximum drain current of 30A. It also has an on-state resistance of 12mΩ, making it an efficient and cost effective solution. The IXFT80N30P3 is capable of blocking reverse voltages up to 20V and is well suited for various control applications. As a result, it can be used in a wide range of scenarios, including over current protection, protection from short-circuit, over voltage protection, and temperature control.The IXFT80N30P3 has a number of advantages over other IGBTs, including higher conduction and switching performance, small size, and low power consumption. It can also be used in a variety of applications, such as motor control, power conversion and battery chargers. Its high level of efficiency allows it to be used in many power consuming electronic devices, and its on-resistance makes it an ideal choice for protection from short-circuit or over current.In conclusion, the IXFT80N30P3 is a single insulated-gate bipolar transistor (IGBT) that is well suited for various applications where power conversion and control is required. It features excellent conduction and switching performance, high-speed operation and stability, a low on-resistance, and low power consumption. This makes it an ideal choice for motor control, power conversion, and a variety of other applications.

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