Allicdata Part #: | IXFT96N20P-ND |
Manufacturer Part#: |
IXFT96N20P |
Price: | $ 4.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 96A TO-268 |
More Detail: | N-Channel 200V 96A (Tc) 600W (Tc) Surface Mount TO... |
DataSheet: | IXFT96N20P Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 4.48539 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 600W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 145nC @ 10V |
Series: | PolarHT™ HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 96A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFT96N20P is a Field Effect Transistor (FET) used in a diverse range of applications. This particular type is a metal-oxide semiconductor FET, or MOSFET, in a single form factor, meaning that the device has only a single conductive path from drain to source. The device is specifically designed for power management in a 40-V operating voltage range, to reduce system power consumption, extend battery-life, and ensure higher efficiency in certain applications.
MOSFETs are voltage-controlled transistors. This means that, unlike a BJT, which must have both a base current and a base voltage to control the collector current, the gate (control) voltage of a MOSFET can be used to control the current flow through the transistor. This makes the MOSFET significantly more efficient than the BJT in some applications.
The IXFT96N20P has a drain current rating of 96A and a maximum drain-source voltage rating of 720V. It also features a small gate charge rating of 65nC, thus contributing to its high power efficiency when used in applications that rely on a limited amount of power. In addition, the IXFT96N20P offers a low on-state resistance rating, making it suitable for use in high-frequency applications.
The IXFT96N20P is used in a wide range of applications ranging from motor and appliance control to power management for electrical and automotive systems. Its high efficiency and low power consumption make it an ideal choice for power components in modern systems, particularly when space is limited or when significant power savings are desired. Some of its primary applications include power switching, motor control, and AC power conversion.
The IXFT96N20P works based on the principle of a MOSFET channel. When a voltage is applied to the gate, the channel is formed, which renders the channel region conductive. This enables electrons to move through the channel and create a current flow between drain and source terminals. The current flow can then be easily controlled by changing the voltage at the gate terminal, allowing the device to be used in a vast range of applications.
In conclusion, the IXFT96N20P is a single-form factor MOSFET that is ideally suited for power management applications. Its low gate charge rating and high quality make it a cost-effective and highly efficient FET choice for a wide range of applications, from motor and appliance control to AC power conversion. Its voltage-controlled operation and low on-state resistance make it particularly suitable for high-frequency power systems. As such, the IXFT96N20P is one of the best choices available for managing power requirements in modern systems.
The specific data is subject to PDF, and the above content is for reference
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