| Allicdata Part #: | IXTP10N60P-ND |
| Manufacturer Part#: |
IXTP10N60P |
| Price: | $ 1.93 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 10A TO-220 |
| More Detail: | N-Channel 600V 10A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP10N60P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.93000 |
| 10 +: | $ 1.87210 |
| 100 +: | $ 1.83350 |
| 1000 +: | $ 1.79490 |
| 10000 +: | $ 1.73700 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1610pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Series: | Polar™ |
| Rds On (Max) @ Id, Vgs: | 740 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP10N60P is a field-effect transistor that falls into the category of Transistors - FETs, MOSFETs - Single. It is a part of the IXTP family of FlexITM parts designed by IXYS Corporation. Designed specifically for applications requiring high switching performance and advanced current handling, the IXTP10N60P offers superior performance and reliability.
The IXTP10N60P is a high-voltage, high-performance, single-channel MOSFET. It is built on a lateral power MOSFET construction, making it suitable for applications requiring superior switching performance and fast switching speeds. The device is constructed with a silicon die, along with advanced current handling capabilities, making it an ideal choice for applications requiring high current handling. Additionally, the device has an on-resistance of 10 milliohms.
The IXTP10N60P can be used in a wide variety of applications where an effective switching element is required. It is suitable for switches, power converters, inverters, DC/DC converters, and other power switching applications; it also is suitable for more specialized applications such as lighting control, sensors and controls, and low-voltage DC circuits.
The IXTP10N60P has a range of features that make it well suited for applications requiring high performance, fast switching speeds, and high current handling. First, the device has a breakdown voltage of 600V, making it suitable for applications involving high-voltage applications. Additionally, the device can handle currents of up to 110 A, making it an ideal choice for power switching applications requiring high current. In addition, the device has a low gate charge of 10 nC, ensuring that switching is fast and efficient. Further, the device has excellent thermal performance, allowing it to operate effectively in high-temperature environments.
The working principle of the IXTP10N60P is relatively straightforward. When a potential (voltage) is applied to the device\'s gate, it acts as an electrostatic gate, allowing the flow of electrons through the semiconductor channel in the device. It is the flow of electrons through this channel that causes the device to conduct current. The amount of current conducted through the device is determined by the voltage applied to the gate; the higher the voltage, the higher the current. Similarly, the current conducted through the device is reduced when the voltage applied to the gate is reduced.
The IXTP10N60P is a superior device for applications requiring fast switching and high current-handling capabilities, due to its advanced construction and features. With its high breakdown voltage, fast switching speeds, and high current-handling ratings, the IXTP10N60P is a perfect choice for any application requiring excellent performance.
The specific data is subject to PDF, and the above content is for reference
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