IXTP182N055T Allicdata Electronics
Allicdata Part #:

IXTP182N055T-ND

Manufacturer Part#:

IXTP182N055T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 55V 182A TO-220
More Detail: N-Channel 55V 182A (Tc) 360W (Tc) Through Hole TO-...
DataSheet: IXTP182N055T datasheetIXTP182N055T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXTP182N055T is a field-effect transistor (FET) designed specifically for use in industrial applications. This transistor is a single, unipolar device that uses an insulated gate and an insulated source to create a conduction channel between two regions of the transistor. This conduction channel is used to transfer current between the source and the drain. As such, it is an ideal choice for use in applications where a low gate-source voltage is required, and where the current needs to be switched on or off without the need for a large voltage swing.The IXTP182N055T uses a metal–oxide–semiconductor (MOS) structure with a silicon substrate. This device is a unipolar device, meaning that the conduction channel can only be opened and closed by applying a positive gate voltage. The gate insulation used in this device is silicon nitride. The gate-to-source capacitance of this device is comparatively high, at 35pF. The IXTP182N055T also has an output voltage rating of 30V and a drain current rating of up to 180mA. Further, it has a pinch-off voltage of -25V, which allows the device to operate efficiently in high voltage applications.The IXTP182N055T is well suited for use in various industrial applications, such as high voltage switching, motor control, and amplifier circuits. In high voltage switching applications, the IXTP182N055T can be used to switch large currents up to 180mA between two different voltage references. The low gate voltage requirement of this device makes it an attractive choice for this application as it reduces the costs associated with power supplies.In motor control applications, the IXTP182N055T can be used to switch currents up to 180mA between two different motor speeds or directions. The high gate capacitance of this device allows for fast switching speeds, making it ideal for these types of applications. Finally, in amplifier circuits, the IXTP182N055T can be used to switch current between two different amplifier stages. This allows the amplifier to be optimized for different audio output levels, allowing for a more flexible audio system design. In summary, the IXTP182N055T is an ideal choice for industrial applications requiring a low gate voltage and a high current rating. With its low gate-source capacitance, high current rating, and high voltage ratings, the IXTP182N055T is ideal for use in high voltage switching, motor control, and amplifier circuits.

The specific data is subject to PDF, and the above content is for reference

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