IXTP3N110

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1350pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	42nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drain to Source Voltage (Vdss):	1100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The IXTP3N110 is an advanced power MOSFET with a broad range of applications. It has a three-dimensional geometry structure and a wide range of operating frequencies. IXTP3N110 is a high-performance device optimized for switching applications that integrates features such as high current rating, high-speed switching, and low RDS(on).

Application Field and Working Principle

The IXTP3N110 is an ideal choice for high-power switching, in applications such as high-frequency power supplies and LED lighting. The IXTP3N110 can handle up to 500V and up to 45A, making it an ideal choice for high-power devices. Its low RDS(on) values ensure efficient power conversion, and its integrated components provide high-speed switching with minimal energy loss.The IXTP3N110, as an advanced power MOSFET, works recognizing the electric charges as source, drain, and gate ― to understand the working principle of a power MOSFET, it’s necessary to understand the functionality of each electric charge. The main function of the source, drain, and gate is to control the current flow. The gate’s voltage controls a channel between the source and the drain, allowing the current to flow. This depends on the reverse bias voltage of the drain and source. When there is no voltage bias, that is, when the reverse bias voltage is zero, the channel is blocked and no current can flow. With an increase in the reverse bias voltage, the channel is opened, and current is allowed to flow.The IXTP3N110 has a core component, the MOSFET, the metal-oxide-semiconductor field-effect transistor. This is the most commonly used power MOSFET, and is widely used in switching power supplies, motor control, and other power electronics applications. The IXTP3N110 uses a vertical power MOSFET, which ensures that the device is optimized for high-power switching applications.The IXTP3N110 is ideal for applications that require high-speed switching and high current rating. Due to its three-dimensional geometry structure, the device can achieve high-speed switching, with minimal energy loss. In addition, its wide range of operating frequencies makes it suitable for a range of applications.

Conclusion

The IXTP3N110 is an advanced power MOSFET that is optimized for switching applications. Its three-dimensional structure and wide range of operating frequencies make it ideal for high-power switching applications, such as high-frequency power supplies and LED lighting. The device offers a high current rating and low RDS(on) values, and its integrated components provide high-speed switching with minimal energy loss.

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