IXTP62N15P Allicdata Electronics
Allicdata Part #:

IXTP62N15P-ND

Manufacturer Part#:

IXTP62N15P

Price: $ 2.18
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 62A TO-220
More Detail: N-Channel 150V 62A (Tc) 350W (Tc) Through Hole TO-...
DataSheet: IXTP62N15P datasheetIXTP62N15P Datasheet/PDF
Quantity: 1000
50 +: $ 1.95615
Stock 1000Can Ship Immediately
$ 2.18
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 350W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTP62N15P is a device commonly used in power electronic applications and forms part of a family of P-Channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). The device is a single N-channel MOSFET with a wide area of applications, such as motor drivers, high-definition audio amplifiers, AC and high voltage DC power control, motion control applications and pulse-width modulation (PWM) applications. The IXTP62N15P provides a low RDS(on) of 0.62 ohm and high current handling capability of up to 15A. This makes it the perfect solution for controlling high power loads efficiently.

The IXTP62N15P has a typical drain-source breakdown voltage of 60V and has extended operating temperature range capabilities of -55degC to 150degC. This temperature range allows the device to be used in a variety of demanding applications such as automotive, industrial and medical applications.

The IXTP62N15P has a typical VGS of 6V, which allows for a wide range of VGS control voltages. The device’s low RDS(on) of 0.62 ohm reduces power losses in the device due to its lower resistance when conducting current. This allows the device to operate at higher frequencies and improved efficiency. The device also has a high current rating of 15A, which allows for the control of high power loads without compromising on efficiency.

The working principle of the IXTP62N15P is based on the transfer of electric currents when biased in the forward-active region. In the forward-active region, the IXTP62N15P acts as a voltage-controlled switch, allowing current to flow between source and drain. The device’s gate voltage is used to control the flow of current between source and drain, hence allowing for the control of high power loads.

The IXTP62N15P is a versatile and cost-effective device which is suitable for a wide variety of applications ranging from motor drivers to high power AC and high voltage DC power control. The device’s low RDS(on) reduces power losses, its extended operating temperature range and high current handling capability of up to 15A make it the perfect choice for power electronic applications. With its working principle based on the transfer of electric currents and its ability to control high power loads efficiently, the IXTP62N15P is an ideal device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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