IXTP50N20P

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IXTP50N20P is a type of power MOSFETs (metal-oxide-semiconductor field-effect transistors) from International Rectifier. It belongs to the company’s N-channel MOSFET family of devices. This type of MOSFET is specially designed for continuous mode operation, with low on-state resistance (Rdson) and fast switching times for high efficiency applications such as switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), motor control and other similar applications.

IXTP50N20P is a single N-channel MOSFET in a very compact TO-220 package, with an integral anti-parallel source-drain diode. It comes with a low maximum on-resistance (Rdson) of 0.9 ohm even at high drain-source voltages and good thermal stability, making it ideal for high current and high frequency operations.

IXTP50N20P provides high power handling capabilities (3.2A ID at 25°C/85°C) and low gate charge (Qg) and gate to source charge (Qgs), allowing fast switching and great efficiency in several applications. Its advanced trench technology also yields very low on-resistance per area, making it suitable for designs striving for low and safe operating temperature. Furthermore, its low EMI (electromagnetic interference) characteristics ensure quiet operation, making it ideal for focused point applications.

The operating principle of MOSFETs like IXTP50N20P is based on the “source-drain” mechanism. When a voltage is applied between the source and the drain (Vd) of the FET, an electric field develops across the device. This electric field, combined with the applied gate voltage, modulates the flow of electrons through the channel by creating an inversion layer, which acts as a conventional field-effect transistor. Vg (gate to source voltage) is used to turn MOSFET “on” or “off”. The inversion layer ensures that when it is turned “off”, the FET behaves as an insulator, and current cannot flow from the drain to the source. When turned “on”, the FET behaves as a conductor and current can flow from the drain to the source.

IXTP50N20P is a powerful and efficient power MOSFET suitable for high switching-frequency applications. The low on-resistance and advanced technology used to create IXTP50N20P allows it to offer very good thermal performance and low operating temperature, making it ideal for applications that require high power rating and fast switching. PCIM test results show that while conventional Silicon MOSFETs do not offer the same efficiency and stability, IXTP50N20P outperforms its competitors in terms of commutation speed and energy efficiency.

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