IXTP44P15T Allicdata Electronics
Allicdata Part #:

IXTP44P15T-ND

Manufacturer Part#:

IXTP44P15T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 150V 44A TO-220
More Detail: P-Channel 150V 44A (Tc) 298W (Tc) Through Hole TO-...
DataSheet: IXTP44P15T datasheetIXTP44P15T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Power Dissipation (Max): 298W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
Series: TrenchP™
Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction

The IXTP44P15T is a N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is created using one of the advanced powerMOSFET technologies available today, allowing it to achieve superior performance both in terms of power and thermal efficiency.

Application Field

The IXTP44P15T is designed to be used in high-power switch mode power supplies (SMPS) and motor control applications. This device is particularly suitable for applications that require efficient, accurate and constant supply of power with no distortion or interruption. It allows power conversion with very low losses and can operate at very high frequency (up to 500Khz). Additionally, the IXTP44P15T offers excellent thermal performance, with a low thermal resistance of 0.53°C/W.

Working Principle

The traditional FET (Field Effect Transistor) works by applying a voltage to a gate connected to a source of power. This voltage sets up an electric field between the gate and the source which is then used to control the flow of a current between the source and the drain. In an N-channel Enhancement Mode MOSFET such as the IXTP44P15T, this same principle is applied to a metal-oxide insulator (a semiconductor material) resulting in a device that is far more efficient and reliable than a traditional FET.

When a voltage is applied to the gate electrode, it sets up an electric field that attracts carriers (electrons) which form a conductive channel between the source and the drain. The current flow between the source and drain then depends on the amount of voltage applied to the gate. This means that the IXTP44P15T can be used to control the flow of current, making it an ideal device for regulating a power supply.

Conclusion

The IXTP44P15T is an advanced N-channel Enhancement Mode MOSFET that is designed for use in high-power switch mode power supplies (SMPS) and motor control applications. It offers superior performance in terms of power and thermal efficiency and is capable of operating at high frequencies (up to 500Khz). The IXTP44P15T offers excellent thermal performance, with a low thermal resistance of 0.53°C/W and offers precise and constant control of current flow with no distortion or interruption.

The specific data is subject to PDF, and the above content is for reference

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