| Allicdata Part #: | IXTP26P10T-ND |
| Manufacturer Part#: |
IXTP26P10T |
| Price: | $ 1.87 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 100V 26A TO-220 |
| More Detail: | P-Channel 100V 26A (Tc) 150W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP26P10T Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 1.67908 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3820pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| Series: | TrenchP™ |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP26P10T transistors are small, compact and reliable FETs (Field Effect Transistors). They are often used in a wide range of applications due to their low on-resistance and smaller size. The IXTP26P10T is a metal–oxide–semiconductor field-effect transistor (MOSFET) suitable for use as a low-noise low-resistance electronic switch or amplifier. This is made possible due to the enhanced material of its construction, which is composed of a thin layer of semi-conducting silicon material.
The IXTP26P10T FET has a wide variety of applications such as power management, audio amplifiers and load switches. It also has higher frequency switching performance as compared to other FETs. As a result, its turn-on and turn-off times can be very fast. This fast switching makes it ideal for high frequency and low-power applications.
The IXTP26P10T FET works on the principle of the Field Effect (FE). In a FE system, a voltage applied to the gate of the FET produces an electric field. This electric field causes an electric current to flow through the FET. The current also causes a change in the impedance of the device, allowing it to act as an amplifier or switch. This ability to amplify or switch signals is what makes the IXTP26P10T FET such a useful component.
The IXTP26P10T FET has a low threshold voltage when compared to other FETs. This low threshold voltage make makes it ideal for low voltage switching applications. The FET also features low gate-drain capacitance and a fast switching response. This makes it suitable for a wide range of applications.
The IXTP26P10T FET also has a low on-resistance across a wide VGS gate-source voltage range. This further increases its efficiency compared to other FETs. It also has an excellent breakdown voltage of 800V, making it ideal for high voltage applications.
The IXTP26P10T FET is an essential component for many electronic systems. It is an efficient, reliable, and inexpensive component that is suitable for a wide range of applications. Its small form factor and low voltage requirements make it ideal for use in portable electronic devices. It is also capable of high-frequency switching, making it suitable for use in higher frequency applications such as audio amplifiers and other noise-sensitive systems.
The specific data is subject to PDF, and the above content is for reference
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