| Allicdata Part #: | IXTP12N50PM-ND |
| Manufacturer Part#: |
IXTP12N50PM |
| Price: | $ 1.83 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 6A TO-220 |
| More Detail: | N-Channel 500V 6A (Tc) 50W (Tc) Through Hole TO-22... |
| DataSheet: |  IXTP12N50PM Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.83000 |
| 10 +: | $ 1.77510 |
| 100 +: | $ 1.73850 |
| 1000 +: | $ 1.70190 |
| 10000 +: | $ 1.64700 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1830pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | Polar™ |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP12N50PM is a high-performance E-mode enhancement-mode vertical-channel field effect transistor (FET). It has a drain current rating of 12A and a drain-source voltage rating of 500V. Due to its high current and voltage ratings, it is ideal for use in high-current, high-power circuits. It also has an excellent power dissipation capability, making it suitable for use in applications where heat dissipation is a concern.
The IXTP12N50PM is a high-performance MOSFET, which is a type of FET with an insulated gate. This type of FET has the benefit of having better switching characteristics than traditional FETs and is more efficient in high-current, high-power applications. It works by using an insulated gate to control the voltage applied to the drain, allowing for better control and higher levels of efficiency.
The IXTP12N50PM is primarily used in high-current, high-power applications such as motor control, power conversion, and power switching. It is particularly useful in motor control applications, as it can be used to control the speed and direction of a motor. It is also used in power conversion applications, as it allows for more efficient and faster conversion of power. In power switching applications, it is used to switch between two different circuits or voltages, allowing for faster and more efficient switching.
The IXTP12N50PM has two pins, the drain and the source. A voltage applied to the gate can control the voltage applied to the drain, allowing the user to control the current through the transistor. This type of transistor is most commonly used in an enhancement-mode configuration, wherein a positive voltage applied to the gate will increase the current through the transistor. Conversely, a negative voltage applied to the gate will decrease the current through the transistor.
The IXTP12N50PM is an efficient, low-power consumption MOSFET. It is well suited for a variety of applications, including motor control, power conversion, and power switching. Its high current and voltage ratings make it ideal for use in high-current, high-power applications. Its insulated gate allows for better control and higher levels of efficiency, making it the ideal choice for a variety of demanding applications.
The specific data is subject to PDF, and the above content is for reference
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