IXTP160N075T Allicdata Electronics
Allicdata Part #:

IXTP160N075T-ND

Manufacturer Part#:

IXTP160N075T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 160A TO-220
More Detail: N-Channel 75V 160A (Tc) 360W (Tc) Through Hole TO-...
DataSheet: IXTP160N075T datasheetIXTP160N075T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXTP160N075T is a high-power Field Effect Transistor (FET) that is commonly used in a variety of switching, linear and power control applications. It is a silicon-based, N-Channel Enhancement-Mode FET that has been designed to effectively transfer electrical signals between high and low voltages. This type of FET is more efficient, reliable, and cost-effective than other types of FETs, making it popular in a variety of applications.

The IXTP160N075T is a high-power MOSFET that features a 150-amp maximum drain current (ID) and a 75-volt drain-source voltage (VDSS) rating. It is constructed from a high-grade silicon substrate, which is then thermally treated and etched to create a single-gateoxide structure. The gate oxide is designed to be extremely thin, so it can quickly and efficiently pass signals between the drain and source sides of the FET.

The IXTP160N075T has a low maximum on-state drain-source resistance (RDSon), which helps to minimize any voltage drops, ensuring consistent and precise voltage delivery. Additionally, its capacitance-gate threshold voltage, or V(Th), is designed to allow the FET to switch faster and with more consistent accuracy, increasing its switching frequency and improving its noise immunity. The FET also has a low gate charge (Qg), which is useful for reducing switch-on times and decreasing losses from heat.

The IXTP160N075T is often used for a wide range of applications, such as power switching, motor control, current sensing, and load switching. It is capable of handling large power requirements, making it useful for high current applications, such as automotive and industrial motor control. Additionally, its high switching speed makes it well-suited for motor drive and power conversion applications. It is also commonly used for current sensing and load switching, as its low RDSon helps reduce power losses in these circuits.

In summary, the IXTP160N075T is a high-power MOSFET that is designed with a single-gateoxide structure. This FET is designed to quickly and efficiently switch electrical signals between high and low voltages, while providing low dropout and low gate charge capabilities. It is often used for a variety of applications, including power switching, motor control, current sensing, and load switching.

The specific data is subject to PDF, and the above content is for reference

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