| Allicdata Part #: | IXTP8N50P-ND |
| Manufacturer Part#: |
IXTP8N50P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 8A TO-220 |
| More Detail: | N-Channel 500V 8A (Tc) 150W (Tc) Through Hole TO-2... |
| DataSheet: |  IXTP8N50P Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 5.5V @ 100µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tube |
Description
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Introduction:
The IXTP8N50P is a single N-channel, insulated gate, majority carrier, power MOSFET and forms part of IXYS family of high voltage MOSFETs and IGBTs. It is designed specifically for applications requiring high power handling capability and maximum reliability.
Application Field:
The IXTP8N50P\'s are designed to be applied in areas such as AC and DC motor drives, welding and solar cell applications, power supply, switch-mode power supplies, uninterruptible power supplies, UPS, soft-switches, choppers, and rectifiers plus other switch-mode power supplies as well as applications that require low on-state resistance and low gate drive current. Its high voltage and current capability makes it suitable for a wide variety of applications, from automotive to high power industrial usages.
Features:
The IXTP8N50P offers a maximum drain source voltage (Vds) of 400V, a maximum drain current (Id) of 8A, and a maximum junction temperature (Tj) of 175 degrees Celsius (C). It offers high power output with very low gate drive current and it also has very low on-state resistance. This device integrates an integral zener diode which minimizes gate to source voltage and reduce the EMI noise when switching frequencies are above 40KHz. This device is robust thermally and has an isolated copper leadframe which eliminates device instability during operation. It also features a fast switching time with low gate charges, making it ideal for applications that require high dv/dt.
Working Principle:
The IXTP8N50P is a majority charge carrier device. This means the majority of current conduction through the device is through holes which are negative charge carriers. This type of MOSFET uses a P-channel between the drain and source terminals which allows for majority current to flow through when the gate voltage is applied. When the gate voltage is applied it inverts the P-channel which allows majority current to flow. When the gate voltage is removed the majoritycharge carriers (holes) are depleted, resulting in a non-conduction state. The IXTP8N50P is designed to transfer large amounts of power while operating in a linear mode and can reduce losses due to its high current handling capability.
Summary:
The IXTP8N50P is a single N-channel insulated gate majority carrier power MOSFET designed for applications requiring high power handling capability and maximum reliability. This device offers a maximum drain source voltage (Vds) of 400V, maximum drain current (Id) of 8A, and maximum junction temperature (Tj) of 175 degrees Celsius (C). It also features an integral zener diode which minimizes gate to source voltage and reduce EMI noise. The IXTP8N50P has a low on-state resistance, fast switching time with low gate charges, and a robust thermal design. In addition, it has a high voltage and current capability, making it suitable for a wide variety of automotive and high power industrial applications.
The IXTP8N50P is a single N-channel, insulated gate, majority carrier, power MOSFET and forms part of IXYS family of high voltage MOSFETs and IGBTs. It is designed specifically for applications requiring high power handling capability and maximum reliability.
Application Field:
The IXTP8N50P\'s are designed to be applied in areas such as AC and DC motor drives, welding and solar cell applications, power supply, switch-mode power supplies, uninterruptible power supplies, UPS, soft-switches, choppers, and rectifiers plus other switch-mode power supplies as well as applications that require low on-state resistance and low gate drive current. Its high voltage and current capability makes it suitable for a wide variety of applications, from automotive to high power industrial usages.
Features:
The IXTP8N50P offers a maximum drain source voltage (Vds) of 400V, a maximum drain current (Id) of 8A, and a maximum junction temperature (Tj) of 175 degrees Celsius (C). It offers high power output with very low gate drive current and it also has very low on-state resistance. This device integrates an integral zener diode which minimizes gate to source voltage and reduce the EMI noise when switching frequencies are above 40KHz. This device is robust thermally and has an isolated copper leadframe which eliminates device instability during operation. It also features a fast switching time with low gate charges, making it ideal for applications that require high dv/dt.
Working Principle:
The IXTP8N50P is a majority charge carrier device. This means the majority of current conduction through the device is through holes which are negative charge carriers. This type of MOSFET uses a P-channel between the drain and source terminals which allows for majority current to flow through when the gate voltage is applied. When the gate voltage is applied it inverts the P-channel which allows majority current to flow. When the gate voltage is removed the majoritycharge carriers (holes) are depleted, resulting in a non-conduction state. The IXTP8N50P is designed to transfer large amounts of power while operating in a linear mode and can reduce losses due to its high current handling capability.
Summary:
The IXTP8N50P is a single N-channel insulated gate majority carrier power MOSFET designed for applications requiring high power handling capability and maximum reliability. This device offers a maximum drain source voltage (Vds) of 400V, maximum drain current (Id) of 8A, and maximum junction temperature (Tj) of 175 degrees Celsius (C). It also features an integral zener diode which minimizes gate to source voltage and reduce EMI noise. The IXTP8N50P has a low on-state resistance, fast switching time with low gate charges, and a robust thermal design. In addition, it has a high voltage and current capability, making it suitable for a wide variety of automotive and high power industrial applications.
The specific data is subject to PDF, and the above content is for reference
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