| Allicdata Part #: | IXTP36P15P-ND |
| Manufacturer Part#: |
IXTP36P15P |
| Price: | $ 3.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 150V 36A TO-220 |
| More Detail: | P-Channel 150V 36A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP36P15P Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 2.93429 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
| Series: | PolarP™ |
| Rds On (Max) @ Id, Vgs: | 110 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP36P15P is a small signal, field-effect transistor (FET) optimized for high-frequency switching applications. It is based on high-voltage power metal–oxide–semiconductor (MOS) technology. IXTP36P15P\'s technology is tailored for use in low voltage applications, typically with switching speeds topped by the GHz mark.
The IXTP36P15P utilizes a vertical double-diffused metal–oxide–silicon (DMOS) construction that results in a 30 volts breakdown voltage rating in a very small footprint. The device fea tures a low RDS (on) of 0.18 ohms, low gate threshold voltage of 0.8 V, and a wide gate-source voltage (Vgs) range of -2.0 V to 10 V. The IXTP36P15P also possesses a low input capacitance of 1.9 pF, making it well suited for high speed, high current switching applications.
The IXTP36P15P is capable of delivering a whopping 1.3 A continuous drain current and a fast reverse recovery time of 10 ns. It also has an ultra-low gate charge of only 2.8 nC, making it suitable for high-frequency switching applications. Some of the typical applications of IXTP36P15P includes cellular phones, TV/satellite equipment, motor control and audio amplifiers.
The IXTP36P15P\'s working principle is quite simple and is based on the same principle as all FETs. It works by having a gate, source, and drain terminal. A voltage is applied to the gate, causing a channel to form between the source and drain. This channel is what allows the electrons to flow, thus producing the current. The characteristics of this channel depend on the voltage applied to the gate, and the voltage applied to the drain and source, as well as the material used in the transistor.
The IXTP36P15P is an excellent choice for a variety of high-frequency switching applications due to its compact size and excellent performance. Its low input capacitance, low gate charge, and fast reverse recovery time make it well suited for high speed, high current switching applications. The IXTP36P15P is an ideal choice for a number of high-frequency switching requirements, including cellular phones, TVs, satellite equipment, motor control, and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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