IXTP64N055T Allicdata Electronics
Allicdata Part #:

IXTP64N055T-ND

Manufacturer Part#:

IXTP64N055T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 55V 64A TO-220
More Detail: N-Channel 55V 64A (Tc) 130W (Tc) Through Hole TO-2...
DataSheet: IXTP64N055T datasheetIXTP64N055T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 25µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXTP64N055T is a single N-Channel MOSFET with near-ideal switching characteristics. It is a low gate-charge transistor that is designed to handle very large voltages, making it suitable for high-power applications. This type of transistor is often used in the switch-mode power supplies, power converters, and motor control applications. It also has a variety of other uses due to its versatility.

The N-Channel MOSFETs, such as the IXTP64N055T, use a semiconductor material as its active region, which is called the channel. The transistors are used to provide very good switching characteristics, and they are well suited for high-speed switching applications. An N-Channel MOSFET operates like an on-off switch. When the voltage is applied to the gate terminal, it creates an electric field in the semiconductor material, which allows the current to flow from the drain terminal to the source terminal. When the voltage is removed from the gate, the electric field is removed, and current flow is blocked.

The IXTP64N055T is constructed with a field-effect-transistor insulation oxide semiconductor (MOSFET). This type of transistor is used because it has both high-speed switching and low ‘on’ resistance. It also has internal power control and requires little power for control.

The major application for the IXTP64N055T is in power switching applications. For example, this type of transistor is used in the switch-mode power supplies, where the MOSFET acts as the main switch. The MOSFET is usually in the form of a power converter, and it can be used to switch between a low and a higher voltage. It is used in motor control applications as well, where it can be used to control the speed and direction of the motor.

Other applications in which the IXTP64N055T is used include in-flight power supplies, process controllers, and other instruments that require switch control. It can also be used in a variety of other applications such as audio power amplifiers, automotive systems, and home appliances. The IXTP64N055T is also good for applications that require high current or voltage switching.

The main working principle of an IXTP64N055T is that when the gate voltage is applied to the semiconductor, it creates an electric field in the channel and allows current to flow from the drain to the source. When the voltage is removed from the gate, the electric field is removed, and current flow is blocked. This is how the IXTP64N055T is able to provide its fast switching characteristics, and it also allows it to be used in applications that require high current and/or voltage switching.

The IXTP64N055T is often used in power electronics applications due to its excellent switching characteristics and low ‘on’ resistance. It is also a good choice for power converters, motor control, and other high-power applications due to its high-voltage handling capabilities. It is also well-suited for in-flight power supplies, process controllers, and other instruments that require switch control.

The specific data is subject to PDF, and the above content is for reference

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