Allicdata Part #: | IXTP2N100P-ND |
Manufacturer Part#: |
IXTP2N100P |
Price: | $ 1.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 2A TO-220 |
More Detail: | N-Channel 1000V 2A (Tc) 86W (Tc) Through Hole TO-2... |
DataSheet: | IXTP2N100P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.53959 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 86W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 655pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24.3nC @ 10V |
Series: | Polar™ |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTP2N100P is a field-effect transistor (FET) device. This device utilizes a vertical, N-channel MOSFET technology, and is characterized by very low on-state resistance (RDS(on)). IXTP2N100P is among the most important types of FETs in the electronics industry, with usage in several applications.
In terms of the device structure, IXTP2N100P has a source and an drain, both of which are connected to metal contacts. The gate is in between the source and the drain, separated by a specific distance from both. The gate is also connected to an external metal contact, through which the control signal can be applied. The source, drain, and gate are insulated from each other by the device\'s insulating layer. Furthermore, a back-gate connection can be made between the drain and the source.
IXTP2N100P is used in AC/DC power conversion, and power management applications. For example, it can be used in personal computers, mobile phones, and other battery powered devices for internal voltage regulation. In addition, it can be used in wireless communications and motor control applications.
The working principle of IXTP2N100P can be divided into two parts: OFF-state and ON-state. In OFF-state, the device is not conducting, meaning that the current between the source and drain is practically zero. This state is achieved by applying a negative voltage to the gate and making sure there is no voltage applied to the source or to the drain. In this way, the reverse current is blocked, as the device is in breakdown due to the reverse bias of the gate.
In ON-state, on the other hand, the device is conducting, meaning that the current between the source and the drain is relatively large. This state is achieved by applying a positive voltage to the gate, which in turn causes the gate-to-source voltage (VGS) to become positive. This process causes electrons in the source region to become "free", and to be attracted to the drain, thus giving rise to a larger current flow through the device.
IXTP2N100P is an important MOSFET device, used in various electronic and electrical applications. With the help of this device, AC to DC power conversion, power management, and motor control applications become possible. Furthermore, the working principle of this device can be divided into two parts: OFF-state and ON-state, wherein in OFF-state, the device inhibits current flow between the source and the drain, and in ON-state, it facilitates current flow between them. This dual function makes the device an essential component in the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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