IXTP36N20T

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The IXTP36N20T is a vertical DMOS Power Transistor designed for use in a variety of consumer, industrial, and automotive applications. This device is the latest addition to Infineon Technologies’ wide range of MOSFETs. It has a wide drain-source voltage of ± 36 V and a maximum drain current of 20 A. It is a single Pulse type MOSFET with a variety of package options, making it well suited for use in a wide range of applications. In this article, we will explore the IXTP36N20T’s application field and working principles in detail.

The IXTP36N20T is designed for use in many different applications, including motor control, power supply, lighting, desoldering systems, and air flow control. The MOSFET has very low on-state resistance, making it ideal for high frequency low loss applications. It also features thermal shutoff protection, short circuit protection, and over temperature protection. It has a maximum operating temperature of 150 °C, making it well suited for applications where power dissipation is a concern.

The IXTP36N20T also has a low gate-drain charge, meaning that it can switch very quickly with low operating power. This MOSFET utilizes a series configuration, which allows it to provide high efficiency and improved power density in applications where current and voltage are fluctuating. It is also capable of withstanding high temperatures, making it suitable for automotive applications.

In terms of working principles, the IXTP36N20T is a single Pulse type MOSFET. This means that it uses a single gate-channel field effect transistor (FET) to control a large current flow. When a voltage is applied to the gate, it creates an electric field which modulates the flow of current between the source and drain. When the voltage is removed, the transistor turns off and the current is stopped.

The IXTP36N20T is constructed from several layers of semiconductor material, including a gate-channel, an insulation layer, and source and drain regions. The gate-channel forms an electric field when a voltage is applied to the gate, and this electric field modulates the current between the source and drain. The insulation layer separates the gate-channel from the source and drain regions, which prevents the current from flowing directly between them.

The IXTP36N20T is also capable of providing very fast response times, as well as low on-state resistance. This helps to decrease transition times and reduce power loss in applications where current and voltage are fluctuating. Additionally, the MOSFET has very low thermal resistance, which helps to further reduce power dissipation.

The IXTP36N20T is an excellent choice for applications requiring high performance and reliable operation. It is capable of operating at high temperatures, making it well suited for automotive applications. Furthermore, its low on-state resistance and fast response times make it ideal for high frequency low-loss applications.

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