IXTP50N20PM Allicdata Electronics
Allicdata Part #:

IXTP50N20PM-ND

Manufacturer Part#:

IXTP50N20PM

Price: $ 2.95
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 20A TO-220
More Detail: N-Channel 200V 20A (Tc) 90W (Tc) Through Hole TO-2...
DataSheet: IXTP50N20PM datasheetIXTP50N20PM Datasheet/PDF
Quantity: 1000
50 +: $ 2.65709
Stock 1000Can Ship Immediately
$ 2.95
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTP50N20PM is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is coated with a special thin film dielectric for resistance to strong operational voltage. This high-voltage transistor is used in a wide range of applications, from telecommunications to electric motors. Its working principle is based on a continuous electrical conducting channel created by the MOSFET in a semiconductor material.

The IXTP50N20PM is an advanced transistor that derives its electrical performance from the earlier MOSFET with improved reliability. The “PM” at the end of the name indicates this is a “premium” MOSFET. As a single-transistor, it has an operating voltage of 50 volts, a current limit of 20 Amps, a thermal resistance of 31.25°C/W, and a maximum allowable power dissipation of 75 Watts.

The IXTP50N20PM uses an insulated gate SPAD (surface passivating drain) structure with an epitaxial layer substrate to increase its electric breakdown voltage. These structures simplify connection of the source, gate and drain. The solid-state design also has a small junction capacitance, making this transistor suitable for switching operations.

The IXTP50N20PM transistor is commonly used for a variety of power applications, such as high-voltage switch mode power supplies (SMPS), electric motor and industrial equipment, automobile electric power networks, and AC/DC motor control systems. The IXTP50N20PM offers fast switching times and low MOSFET gate charge capability. Additionally, the composite P-body design has low conduction losses, giving this transistor the capability to switch low resistance loads at high frequencies.

Overall, the IXTP50N20PM is a single, high-performance N-channel MOSFET with a gate dielectric capable of resisting high voltage operation. It offers fast switching speeds, low conduction losses, and a low junction capacitance. This transistor is typically used in a variety of power applications, including SMPS, AC/DC motor control systems, and electric motor and industrial equipment.

The specific data is subject to PDF, and the above content is for reference

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