| Allicdata Part #: | IXTP6N100D2-ND |
| Manufacturer Part#: |
IXTP6N100D2 |
| Price: | $ 4.77 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 6A TO220AB |
| More Detail: | N-Channel 1000V 6A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP6N100D2 Datasheet/PDF |
| Quantity: | 54 |
| 1 +: | $ 4.34070 |
| 50 +: | $ 3.48844 |
| 100 +: | $ 3.17841 |
| 500 +: | $ 2.57371 |
| 1000 +: | $ 2.17060 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 2650pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 3A, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP6N100D2 is a popular insulated-gate bipolar junction transistor (IGBT) module that is used in a wide range of applications. This article will discuss the IXTP6N100D2’s application field and working principle.
What is an IGBT?An insulated-gate bipolar junction transistor (IGBT) is a power semiconductor device with two terminals (anode and cathode) that is used for controlling the flow of electrical current from the anode to cathode. IGBTs are a type of transistor and are typically used in switching power supplies, in motor drives, and for other high-power switching applications.
Application FieldsThe IXTP6N100D2 is an IGBT module that is used in a wide range of applications. This module is often used in motor drives, electrical power systems, and other high-power applications. It is also used in frequency converters, power electronics, robotics, solar cells, and much more. Its high frequency performance and superior thermal characteristics make it an ideal choice for these applications.
Working PrincipleThe IXTP6N100D2 is an IGBT module that operates on a voltage-controlled principle. When a voltage is applied to the gate terminal, the gate-to-source junction is forward biased and a low-resistance channel is formed between the source and the drain. As a result, a large current can flow from the source to the drain. The drain-to-source voltage is small and the power dissipation is low. This helps to keep the device cool and helps to extend its lifespan. The IXTP6N100D2 also has a high switching speed, which makes it ideal for motor drives, where a fast response is required.
ConclusionThe IXTP6N100D2 is a popular IGBT module that is used in a wide range of applications. It is often used in motor drives, power systems, and other high-power applications. Its voltage-controlled principle, high-frequency performance, and excellent thermal characteristics make it an ideal choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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