Allicdata Part #: | IXTP76N25T-ND |
Manufacturer Part#: |
IXTP76N25T |
Price: | $ 2.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 76A TO-220 |
More Detail: | N-Channel 250V 76A (Tc) 460W (Tc) Through Hole TO-... |
DataSheet: | IXTP76N25T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.44516 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP76N25T is a type of transistor MOSFET (metal oxide semiconductor field effect transistor) manufactured by IXYS. It belongs to the family of single MOSFETs, containing silicon and an insulated field oxide layer between the source and gate. The device type is N-channel and has a maximum drain source voltage of 150V.
MOSFET transistors are used in a wide range of applications in both analog and digital systems. They are able to switch signals and act as amplifiers with long term stability. The IXTP76N25T is typically used in switching and power management applications, including motor control and power supplies. The MOSFET also has low gate charge and a low RDS(on) and fast recovery time.
To understand the working principle of the IXTP76N25T, it is necessary to consider the two main types of electrical charge and how they interact with each other (the electron and the hole). When a current flows through a material, the electrons move in one direction and the holes move in the opposite direction. This flow of electrons and holes is known as a drift current. In metal oxides, the drift current depends largely on the potential difference between the two metal interfaces. When the potential difference is large enough, electrons start to drift away from the metal surface.
In the IXTP76N25T, the metal oxide layer between the source and gate forms a barrier between the two metal surfaces. This barrier prevents charge from flowing from one metal surface to the other. As a result, when a positive voltage is applied to the gate, the electrons in the oxide layer will arm up, thus creating a depletion region. When this region is sufficiently large enough, it acts as a conductive path through which current can pass from the source to the drain.
Furthermore, the IXTP76N25T has a low gate charge and a low RDS(on). This means that the MOSFET has less of a tendency to accumulate charges when it is turned on and operates more efficiently than other types of transistors. This feature allows it to operate at higher frequencies and perform better in applications like motor control and power management.
The IXTP76N25T is an important component in analog and digital electronics, as it is able to switch signals and act as an amplifier. Its low gate charge, fast recovery time and low RDS(on) enable it to be used in a variety of applications, making it a valuable commodity in this increasingly technology-driven world.
The specific data is subject to PDF, and the above content is for reference
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IXTP100N04T2 | IXYS | -- | 131 | MOSFET N-CH 40V 100A TO-2... |
IXTP70N075T2 | IXYS | 1.48 $ | 84 | MOSFET N-CH 75V 70A TO-22... |
IXTP60N10T | IXYS | -- | 1000 | MOSFET N-CH 100V 60A TO-2... |
IXTP1R6N50D2 | IXYS | -- | 185 | MOSFET N-CH 500V 1.6A TO2... |
IXTP28P065T | IXYS | 2.23 $ | 55 | MOSFET P-CH 65V 28A TO-22... |
IXTP48N20T | IXYS | 2.25 $ | 100 | MOSFET N-CH 200V 48A TO-2... |
IXTP3N50D2 | IXYS | 2.32 $ | 87 | MOSFET N-CH 500V 3A TO220... |
IXTP3N100D2 | IXYS | 2.32 $ | 82 | MOSFET N-CH 1000V 3A TO22... |
IXTP200N055T2 | IXYS | -- | 101 | MOSFET N-CH 55V 200A TO-2... |
IXTP1N100 | IXYS | 3.28 $ | 43 | MOSFET N-CH 1000V 1.5A TO... |
IXTP52P10P | IXYS | 4.02 $ | 75 | MOSFET P-CH 100V 52A TO-2... |
IXTP6N100D2 | IXYS | 4.77 $ | 54 | MOSFET N-CH 1000V 6A TO22... |
IXTP15N50L2 | IXYS | 5.45 $ | 66 | MOSFET N-CH 500V 15A TO-2... |
IXTP16N50P | IXYS | -- | 65 | MOSFET N-CH 500V 16A TO-2... |
IXTP1R6N50P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 1.6A TO-... |
IXTP1R4N60P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 1.4A TO-... |
IXTP152N085T | IXYS | -- | 1000 | MOSFET N-CH 85V 152A TO-2... |
IXTP160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
IXTP160N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 160A TO-2... |
IXTP180N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 180A TO-2... |
IXTP180N085T | IXYS | -- | 1000 | MOSFET N-CH 85V 180A TO-2... |
IXTP182N055T | IXYS | -- | 1000 | MOSFET N-CH 55V 182A TO-2... |
IXTP200N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-2... |
IXTP200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-2... |
IXTP220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-2... |
IXTP220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-2... |
IXTP240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
IXTP50N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 50A TO-22... |
IXTP55N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 55A TO-22... |
IXTP64N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 64A TO-22... |
IXTP70N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 70A TO-22... |
IXTP76N075T | IXYS | -- | 1000 | MOSFET N-CH 75V 76A TO-22... |
IXTP88N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 88A TO-22... |
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