IXTQ102N25T Allicdata Electronics
Allicdata Part #:

IXTQ102N25T-ND

Manufacturer Part#:

IXTQ102N25T

Price: $ 3.75
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 250V 102A TO-3P
More Detail: N-Channel 250V 102A (Tc) Through Hole TO-3P
DataSheet: IXTQ102N25T datasheetIXTQ102N25T Datasheet/PDF
Quantity: 1000
30 +: $ 3.37428
Stock 1000Can Ship Immediately
$ 3.75
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Description

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The IXTQ102N25T is a single transistor device, classified as a Field Effect Transistor (FET) or a Metal Oxide Semiconductor FET (MOSFET). FETs have a simple construction, mainly consisting of a gate, source, and drain region, and an oxide layer separating them. A particular type of FET is the MOSFET, which utilizes a gate oxide layer to separate the source and the drain electrodes. This oxide layer helps to improve the electrical properties of the MOSFET, such as its input capacitance, breakdown voltage, and on-resistance.

The IXTQ102N25T transistor is designed for high speed switching applications. It is a high voltage MOSFET with a maximum drain-source voltage (Vds) of 100V and a maximum drain current (Id) of 8A. It also features a low gate charge (Qg) of only 1.6nC and a low gate-source capacitance (Cgs) of only 0.8pF. These characteristics make it suitable for fast switching applications.

The working principle of the IXTQ102N25T MOSFET is simple. When an appropriate gate-source voltage (Vgs) is applied to the gate terminal, the gate-source capacitance (Cgs) is used to control the flow of charge carriers between the source and drain terminals. By controlling the gate-source capacitance, the IXTQ102N25T is able to turn on and off very quickly, allowing for high speed switching.

The IXTQ102N25T is suitable for applications that require fast switching such as motor control, power conversion, and DC-DC converters. In motor control applications, the IXTQ102N25T can be used to control the speed of the motor by adjusting the gate-source voltage. In power conversion applications, the IXTQ102N25T can be used to regulate the power being supplied to the system by switching on and off quickly. Finally, in DC-DC converters, the IXTQ102N25T can be used to regulate the supply voltage by adjusting the gate-source voltage.

In conclusion, the IXTQ102N25T is a single transistor MOSFET designed for high speed switching applications. It has a low gate charge and gate-source capacitance, making it suitable for fast switching applications such as motor control, power conversion, and DC-DC converters. By controlling the gate-source voltage, the IXTQ102N25T can turn on and off quickly allowing for high speed switching.

The specific data is subject to PDF, and the above content is for reference

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