| Allicdata Part #: | IXTQ130N10T-ND |
| Manufacturer Part#: |
IXTQ130N10T |
| Price: | $ 2.42 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 100V 130A TO-3P |
| More Detail: | N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO... |
| DataSheet: |  IXTQ130N10T Datasheet/PDF |
| Quantity: | 131 |
| 1 +: | $ 2.42000 |
| 10 +: | $ 2.34740 |
| 100 +: | $ 2.29900 |
| 1000 +: | $ 2.25060 |
| 10000 +: | $ 2.17800 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 360W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5080pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 104nC @ 10V |
| Series: | TrenchMV™ |
| Rds On (Max) @ Id, Vgs: | 9.1 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTQ130N10T is a leading part in the world of MOSFETs, especially for its application field and working principle. It is a single-ended IGBT featuring full bridge configuration. It uses high voltage N-base MOSFETs as active elements, which allows it to achieve high frequency and good thermal dissipation. Based on its low loss and very low on-state voltage, this type of component is used for a variety of power conversion applications, such as mobile phone chargers, electromechanical drives, automotive electronics, power management, and more.
The IXTQ130N10T is designed to operate in a full bridge configuration. This means that it uses four separate devices—two N-channel MOSFETs, one P-channel MOSFET, and one IGBT—arranged in a bridge arrangement. Each component serves a different purpose, and the combination of their properties means that the component can perform both switching and amplification tasks. Those applications include controlling motor speed, providing inverter functionality, controlling power sources, and more.
The bi-directional nature of the component makes it suitable for a variety of uses in various industries since it easily switches between direct current (DC) and alternating current (AC) voltages. This switching capability helps manage power sources, as well as allowing for accurate control of DC and AC motors. Additionally, the component offers excellent heat dissipation, allowing it to operate with high power levels for extended periods of time.
The working principle of the IXTQ130N10T is based on the switching ability of the MOSFETs and IGBTs that it contains. When the gate voltage of the MOSFET and IGBT are above their thresholds, the current flowing through them is switched on and off. The required supply voltage must be between the thresholds of the devices. By changing the gate voltage, it is possible to accurately control the current flow, allowing for precise control of the motor’s speed and torque.
The IXTQ130N10T is the perfect choice for a wide array of applications where accuracy and efficiency are paramount. It is a rugged, reliable component that is capable of delivering the kind of performance industrial, medical, and consumer applications require. Not only that, but its innovative design makes it an ideal choice for application areas where power consumption is of the utmost importance.
The specific data is subject to PDF, and the above content is for reference
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