IXTQ18N60P Allicdata Electronics
Allicdata Part #:

IXTQ18N60P-ND

Manufacturer Part#:

IXTQ18N60P

Price: $ 2.75
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 18A TO-3P
More Detail: N-Channel 600V 18A (Tc) 360W (Tc) Through Hole TO-...
DataSheet: IXTQ18N60P datasheetIXTQ18N60P Datasheet/PDF
Quantity: 1000
30 +: $ 2.47779
Stock 1000Can Ship Immediately
$ 2.75
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Series: PolarHV™
Rds On (Max) @ Id, Vgs: 420 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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An IXTQ18N60P is a type of transistor, specifically a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) single. A MOSFET works by controlling the flow of electrons through a semiconductor material by applying an electric field. The design of a MOSFET makes them versatile and well-suited for applications that require a high level of integration and power efficiency. IXTQ18N60P is a high-voltage, low on-resistance, N-channel MOSFET.

A MOSFET in its static state will conduct no current, just like an open switch. When a small gate voltage is applied to the gate terminal, the MOSFET turns on, allowing electrons to flow from the source to the drain. The amount of current flow is controlled by the amount of voltage applied to the gate. This is known as the transistor’s threshold voltage, and it is what makes the device so useful in power applications. In other words, once the amount of voltage applied to the gate is sufficient to overcome the threshold voltage, the MOSFET is turned on. This can be likened to a water pump: turn the switch on and the pump kicks in, but if the switch is off, then the pump is turned off.

IXTQ18N60P is a high-performance device that is resistant to radiation. It has a high voltage rating of 600V, and a low on-resistance of 8.2m(ohm)typ. This makes it ideal for applications such as switching power supplies, motor control, LED lighting, and solar inverters. The device has a high temperature rating of 175°C, so it can be used in high temperature environments. The IXTQ18N60P also has a low gate charge, making it ideal for high frequency and high speed switching applications. The low gate charge offers a high frequency response while still offering adequate levels of on-resistance.

Typically, the IXTQ18N60P can be used in any application where a high voltage rating and low on-resistance MOSFET is required. It is used in switched-mode power supplies and motor control circuits, as well as in high-power applications such as LED lighting and solar inverters. As mentioned, the device has a low gate charge which makes it ideal for high frequency applications such as radio-frequency circuits and high-speed switching. Additionally, the device is resistant to radiation, making it suitable for use in space and military applications.

IXTQ18N60P is a versatile device that can be used for a range of applications and conditions. Due to its high voltage rating and low on-resistance, it can be used in applications requiring high power delivery with low power losses. The device also has a high temperature rating and low gate charge, which makes it suitable for high frequency and high speed switching. Furthermore, its radiation resistance makes it suitable for space and military applications. All in all, IXTQ18N60P is a great choice for a wide range of power applications.

The specific data is subject to PDF, and the above content is for reference

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