Allicdata Part #: | IXTQ200N075T-ND |
Manufacturer Part#: |
IXTQ200N075T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 200A TO-3P |
More Detail: | N-Channel 75V 200A (Tc) 430W (Tc) Through Hole TO-... |
DataSheet: | IXTQ200N075T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 430W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTQ200N075T is a part of the family of insulated-gate bipolar transistors (IGBTs) that are designed to offer a performance balance between the best of both bipolar and metal-oxide-semiconductor field-effect transistor (MOSFET) technologies. IGBTs are fast-switching, rugged, and reliable, making them applicable in a wide range of switching and power management applications.
The IXTQ200N075T has a standard 200A, 300V collector current, and a collector-emitter saturation voltage of 5.5V. This IGBT has a positive temperature coefficient to help reduce device junctions which can happen in applications with high switching power and high collector-emitter voltage. The IXTQ200N075T is a popular choice for applications like UPS systems, motor drives, welding power supplies, and power supplies for communication equipment.
IXTQ200N075T Application Fields
The IXTQ200N075T offers a wide range of possible applications with its fast-switching, rugged, and reliable characteristics. Some application fields it can be used in include:
- Motor controls - The IXTQ200N075T can be used to control motor rotation speeds and directions. By controlling motor signals, the performance of motor-driven applications like pumps, robotic arms, and conveyor belts can be improved.
- Lighting systems - The IXTQ200N075T can be used to control LED and other lighting systems efficiently. By controlling the switching rates, the device will reduce the amount of power wasted by inefficient on/off cycles.
- Power supplies - The IXTQ200N075T is also an ideal choice for oscillators, converters, and inverters. By controlling the power supply and voltage, the device will reduce the amount of power lost by inefficient power cycling.
- Industrial applications - In industrial and manufacturing applications, the IXTQ200N075T is great for controlling the switching of relays and contactors. This is due to its fast switching characteristics. Additionally, the device is rugged and reliable to ensure efficient operation.
- Medical - In medical applications, the IXTQ200N075T is often used to regulate and control biopotential signals. By controlling the transfer of current, the device can be used to regulate the timing and duration of shocks, and to ensure the safety of patients undergoing an electrical procedure.
- Avionics - The IXTQ200N075T is also used in avionic applications to control the switching of motor starter systems. Its fast switching and low switching power loss make it well-suited to aircraft and aerospace systems.
IXTQ200N075T Working Principle
The working principle of the IXTQ200N075T is based upon the external circuit configuration used to form a bridge between a MOSFET and bipolar transistor. This external circuit is known as an isolated-gate bipolar transistor (IGBT). To achieve proper operation, the voltage-controlled gate of the IGBT needs to be connected to its positive terminal, while the current-controlled gate of the IGBT must be connected to its negative terminal. As such, when a voltage is applied to the IGBT’s positive terminal, it will turn on or off depending on the level of the applied voltage.
What sets the IXTQ200N075T apart from other IGBTs is its configuration. This IGBT has a positive temperature coefficient, which helps to reduce device junctions that can form in applications with high switching power and high collector-emitter voltage. Additionally, its completely conductive isolation layer helps provide isolation from the IGBT’s positive and negative terminals and ensures proper function when the IGBT is turned on or off.
Conclusion
The IXTQ200N075T is an IGBT with a wide range of possible applications. Its fast-switching, rugged, and reliable characteristics make it ideal for use in motor control, lighting systems, power supplies, industrial applications, medical applications, and avionic applications. Additionally, its positive temperature coefficient and complete conductive isolation layer help ensure proper operation in high-power applications. As such, the IXTQ200N075T is an ideal choice for applications requiring fast, reliable switching.
The specific data is subject to PDF, and the above content is for reference
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