IXTQ28N15P Allicdata Electronics
Allicdata Part #:

IXTQ28N15P-ND

Manufacturer Part#:

IXTQ28N15P

Price: $ 1.90
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH TO-3P
More Detail: N-Channel Through Hole TO-3P
DataSheet: IXTQ28N15P datasheetIXTQ28N15P Datasheet/PDF
Quantity: 1000
180 +: $ 1.70800
Stock 1000Can Ship Immediately
$ 1.9
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Description

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IXTQ28N15P application field and working principle

The IXTQ28N15P is a 900V N-channel MOSFET device fabricated using the advanced XPT™ process. The robust design of the IXTQ28N15P provides a wide range of features that make it an excellent choice for a variety of applications. The wide variety of applications includes high current power amplifiers, switching power supplies, automotive amplifiers, and audio amplifiers. The IXTQ28N15P is also well suited for use in high power applications such as power switching and high power audio amplifiers.

IXTQ28N15P has a wide range of applications due to its low on-resistance and high current capability. The IXTQ28N15P is an excellent choice for DC-DC converters, phase-shifted full bridge topologies, forward converters, flyback converters, and PFC converters. It is also well suited for use in high power audio amplifiers, and motor control applications. The IXTQ28N15P is designed to withstand a voltage of 900V, making it ideal for high voltage applications.

The IXTQ28N15P is an N-channel enhancement mode MOSFET device. The device is designed to operate in an open drain or source configuration, depending on the application. The device uses MOS capacitors to isolate the source and drain from the bulk of the device. The MOS capacitors are formed by the diffusion of metal oxide layers on the surface of the semiconductor. This process is known as the depletion-layer technique. The depletion-layer technique is a method of controlling the threshold voltage of the device. The IXTQ28N15P has a low threshold voltage of 4V, making it suitable for low voltage applications.

The IXTQ28N15P is designed to provide high current and low on-resistance. The device has an integrated gate resistance of 0.58ohms, making it suitable for high current applications. The IXTQ28N15P also has a low maximum voltage rating of 900V. This makes it suitable for use in high voltage applications. The device also has high gate charge and body diode reverse recovery characteristics, making it suitable for high power applications.

In conclusion, the IXTQ28N15P is a 900V, N-channel enhancement mode MOSFET device. The device has low on-resistance, high current capability, and low threshold voltage. The IXTQ28N15P is well suited for high power applications such as power switching and high power audio amplifiers. The device is also suitable for DC-DC converters, phase-shifted full bridge topologies, and other high voltage applications.

The specific data is subject to PDF, and the above content is for reference

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