Allicdata Part #: | IXTQ76N25T-ND |
Manufacturer Part#: |
IXTQ76N25T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 76A TO-3P |
More Detail: | N-Channel 250V 76A (Tc) 460W (Tc) Through Hole TO-... |
DataSheet: | IXTQ76N25T Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTQ76N25T is an enhancement mode Power MOSFET packaged in the industry standard 3-pin SOT-223 form factor. This device delivers high drain source voltage (VDS) and high current capability up to 74.6 A, with very low on-resistance (RDS(on)).
The IXTQ76N25T is ideal for a variety of applications requiring a low voltage drop, low power and low on-resistance switch in the DC-DC converter and power supply design, where efficiency and flexibility are essential. It\'s useful in a variety of remote sensing, medical, industrial, consumer and automotive applications.
Application Field:
The IXTQ76N25T MOSFET is ideal for high current, high frequency and high efficiency applications, such as DC-DC converters, power supplies, DC motor and BLDC motor drives, LED drivers, ballasts, and consumer electronics. This device is also suitable for a wide range of medical, industrial, consumer, automotive and computing applications.
Working Principle:
The IXTQ76N25T is an enhancement mode Power MOSFET, that is designed to switch high voltage, high current and high-frequency signals. It works on the principle of voltage controlling current as opposed to current controlling voltage, like in a bipolar junction transistor. The MOSFET consists of a gate oxide layer, a source and a drain, which are the essential components to the functioning of the MOSFET. The gate oxide layer basically acts as an insulator and prevents current from flowing through the device until a certain threshold voltage is applied to the gate. Once enough voltage is applied, electrons are allowed to flow through the device, thus turning on the device and allowing current to flow.
The IXTQ76N25T delivers high drain source voltage (VDS) and high current capability up to 74.6 A, with very low on-resistance (RDS(on)). The device is controlled by a small gate voltage (Vgs) and presents very low total gate charge (Qg). This feature makes the IXTQ76N25T ideal for switching applications with high efficiency.
The IXTQ76N25T includes built-in internal Avalanche current protection and its efficient thermal performance is also made possible due to its low RDS(on). This device can be operated either as an N-channel or a P-channel MOSFET, which are very useful features when an input signal needs to be inverted.
In summary, the IXTQ76N25T MOSFET is a robust and reliable device for a variety of power applications including DC-DC converters, power supplies, DC motor and BLDC motor drives, LED drivers, ballasts, and consumer electronics. This device offers low RDS(on), high current capability and high efficiency.
The specific data is subject to PDF, and the above content is for reference
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