Allicdata Part #: | IXTQ180N10T-ND |
Manufacturer Part#: |
IXTQ180N10T |
Price: | $ 3.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 180A TO-3P |
More Detail: | N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO... |
DataSheet: | IXTQ180N10T Datasheet/PDF |
Quantity: | 47 |
1 +: | $ 3.14370 |
30 +: | $ 2.52672 |
120 +: | $ 2.30212 |
510 +: | $ 1.86413 |
1020 +: | $ 1.57217 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 151nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTQ180N10T is an insulated gate transistor, more commonly known as a MOSFET. This component is rather unique in that not only is it a N-channel type transistor, but it is also rated for a very high voltage, up to 180 volts. It is also capable of handling extremely large currents of up to 10 amps. This makes the IXTQ180N10T an ideal choice for applications that need to switch high voltage and/or high power signals.
The IXTQ180N10T is designed to be a very efficient linear switching element. It has an extremely low on-state resistance, usually measured in the range of several milliohms. This means the power dissipation of the transistor is very low, making it a good choice for applications that have limited size or cooling resources. The low on-state resistance also makes it a good choice for applications that require fast switching speeds.
The IXTQ180N10T is also designed to be a relatively low-noise transmitter. This is thanks to its high input impedance, which limits the amount of voltage noise that can be generated. Its high output impedance also means that the current through the transistor will be relatively constant, which is important for applications that require high precision control.
The IXTQ180N10T belongs to a larger family of devices known as MOSFETs (metal-oxide-semiconductor field-effect transistors). These transistors are unique in that they use a gate to control the current flowing through it. Unlike traditional transistors, MOSFETs do not require a physical connection from its gate signal to the source, so they can be used in small, space-saving packages.
The working principle of MOSFETs is relatively simple. When the gate voltage is applied, it causes a charge to build up on the transistor’s gate-source capacitance, which then in turn creates a field in the channel between the source and drain. This field repels the electrons in the channel, reducing the resistance and allowing current to flow through the transistor.
The IXTQ180N10T is used in many different applications, such as motor control, power amplifiers, analog switches, and high voltage DC to DC converters. It is also commonly used in automotive and industrial applications, as it can handle high voltages and currents that would be destructive to other types of transistors. The IXTQ180N10T is also a good choice for applications that require fast switching speeds, as its low on-state resistance helps to minimize switching transition times.
In conclusion, the IXTQ180N10T is a versatile and powerful MOSFET transistor. Its high voltage, high current rating, and low on-state resistance make it an ideal choice for applications that require fast switching, high voltage or high current signals, or that have limited space or cooling resources. Its simple working principle and wide range of uses make it an indispensable part of many electronic projects and applications.
The specific data is subject to PDF, and the above content is for reference
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