IXTQ36N50P Allicdata Electronics
Allicdata Part #:

IXTQ36N50P-ND

Manufacturer Part#:

IXTQ36N50P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 36A TO-3P
More Detail: N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-...
DataSheet: IXTQ36N50P datasheetIXTQ36N50P Datasheet/PDF
Quantity: 27
Stock 27Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Series: PolarHV™
Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTQ36N50P is a type of low-powered insulated gate bipolar transistor (IGBT). This three-terminal semiconductor device is part of the IXT family of IGBTs, which contains both N and P versions. The IXTQ36N50P application field and working principle should be discussed in detail in order to understand how best to use the device.

The IXTQ36N50P is designed for use in power supplies and other applications that require low-powered currents. The operational voltage range of the IXTQ36N50P is from -40 to 600 volts. The device is made from gallium arsenide, silicon, and a variety of other materials to help reduce power dissipated and energy consumption.

The working principle of the IXTQ36N50P is very similar to that of other IGBT transistors. The device contains two layers of semiconductor materials, each of which is a different type. A voltage applied across the two layers causes electrons to travel through the device, and this current can be controlled by a gate voltage applied to the device. By manipulating the gate voltage, the impedance of the device can be adjusted, allowing it to be used as a voltage regulator or other low-powered applications.

The IXTQ36N50P is part of the single device family of MOSFETs, which stands for metal oxide semiconductor field-effect transistors. MOSFETs use a gate voltage to control the flow of electrons, allowing for various types of current control. This makes them useful for low-power applications where controllability and efficiency is important.

The IXTQ36N50P is also commonly used in power supplies. The device has a low on-state resistance, which allows it to transfer more power efficiently. The low-power operation also has the benefit of reduced energy consumption, making it ideal for large-scale power supplies.

The IXTQ36N50P application field and working principle can also be used for other applications. For example, the device can be used in the control of switching current and triggering of circuits. The device can also be used in DC-DC converters, AC and DC power supplies, and other applications that require low-powered operation.

In conclusion, the IXTQ36N50 is a low-powered IGBT device that has a wide range of applications. It is part of the single device family of MOSFET transistors, which have the advantage of improved controllability and lower power consumption. The IXTQ36N50P application field and working principle can be used in power supplies, switching current and triggering of circuits, and other low-powered operations.

The specific data is subject to PDF, and the above content is for reference

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